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首页> 外文期刊>Journal of Micromechanics and Microengineering >The fabrication of nanostructures with a large range of dimensions and the potential application for light outcoupling in organic light-emitting diodes
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The fabrication of nanostructures with a large range of dimensions and the potential application for light outcoupling in organic light-emitting diodes

机译：具有大范围尺寸的纳米结构的制造和有机发光二极管中的光输出耦合的潜在应用

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The fabrication of a nanostructure with a size of hundreds of nanometers down to sub-20 tun is investigated and demonstrated by c-beam lithography (EBL). The proximity effect influenced by the exposure dose during EBL is explored and analyzed for both pillar and grating patterns with positive and negative photoresist. By good control of the proximity effect and etching process, grating patterns from hundreds of nanometers down to about 20nm are obtained. Furthermore, a pillar structure with a size down to sub-20nm is achieved by annealing treatment of the photoresist hydrogen silsesquioxane at 400 degrees C without any further etching process. These nanostructures show great potential for efficiency enhancement of organic light-emitting diodes (OLEDs). The finite element analysis demonstrates there is the possibility of enhancing the external quantum efficiency of OLEDs peaking at 510mn by a factor of 1.4. Such a high enhancement factor can only be achieved with finely controlled nanostructures, indicating the importance of size control during nanofabrication.
机译：通过C束光刻（EBL）研究了尺寸为数百纳米尺寸的纳米结构的纳米结构的制造。探讨了EBL期间暴露剂量影响的接近效应，并针对具有正和负光致抗蚀剂的柱和光栅图案分析。通过对接近效果和蚀刻工艺的良好控制，获得从数百纳米到约20nm的光栅图案。此外，通过在400℃下的光致抗蚀剂氢倍半硅氧烷在400℃下进行无任何进一步的蚀刻工艺来实现具有下降至副20nm的柱结构。这些纳米结构显示出有机发光二极管（OLED）的效率提高的巨大潜力。有限元分析表明，在510Mn的峰值下，有可能提高OLED的外量子效率为1.4。这种高增强因子只能通过细腻控制的纳米结构实现，表明在纳米制造期间的尺寸控制的重要性。

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