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首页> 外文期刊>Journal of Micromechanics and Microengineering >The morphology evolution of selective area wet etched commercial patterned sapphire substrates
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The morphology evolution of selective area wet etched commercial patterned sapphire substrates

机译：选择性地区湿法蚀刻商用图案蓝宝石基材的形态演化

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摘要

Patterned sapphire substrates (PSS) have been widely used to enhance the light output power of light emitting diodes (LEDs). The morphology and shape of the PSS have a great influence on the performance of the LEDs. In this work, commercial PSS is reprocessed utilizing selective-area wet etching approach, in which selective-area SiO2 mask is fabricated through partial exposure lithography instead of conventional overlay lithography. By precisely controlling the exposure time, the etching process can be controlled to take place only on the top of the PSS. Various surface morphology including pyramid, volcano, clover and closedpackaged inverted pyramid can be attained from the evolution of the selective-area etched PSS. The mechanism of the selective-area etched sapphire is correlated to the slant angle of the pattern surface and the SiO2 mask pattern.
机译：图案化的蓝宝石基板（PSS）已被广泛用于增强发光二极管（LED）的光输出功率。 PSS的形态和形状对LED的性能产生了很大影响。 在这项工作中，利用选择性区域湿法蚀刻方法再加工商业PSS，其中通过部分曝光光刻代替传统的覆盖光刻来制造选择性区域SiO2掩模。 通过精确地控制曝光时间，可以控制蚀刻过程仅在PSS的顶部进行。 可以从选择区蚀刻PSS的演变中获得包括金字塔，火山，三叶草和闭合倒金字塔的各种表面形态。 选择性区域蚀刻的蓝宝石的机制与图案表面和SiO2掩模图案的倾斜角度相关。

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  • 作者

    Sun Ce; Zhang Yong hui; Zheng Yu xin; Chu Chun shuang; Tian Kang kai; Fan Chao; Zhang Zi-hui; Bi Wengang;

  • 作者单位

    Hebei Univ Technol Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tecn Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tecn Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tecn Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tecn Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tecn Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tecn Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tecn Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Inst Micronano Photoelectron &

    Electromagnet Tecn Tianjin 300401 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路（IC）;
  • 关键词

    patterned sapphire substrate; selective-area; wet etching;

    机译：图案化蓝宝石衬底;选择性区;湿法蚀刻;

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