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首页> 外文期刊>Journal of Photopolymer Science and Technology >Novel Fast Etch Rate BARC for ArF Implant Layer Lithography
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Novel Fast Etch Rate BARC for ArF Implant Layer Lithography

机译：用于ARF植入层光刻的新型快速蚀刻速率BARC

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As the pattern size for the implantation process decreases, KrF lithography has reached its limit in the implementation of micropatterns, calling for the switch to ArF lithography. The change in wavelength for better resolution has led to the development of patterning materials. As a result, the development of a new bottom anti-refractive coatings (BARC) for implant layer patterning with ArF lithography became necessary. In addition to required chromophores for controlling optical properties with ArF lithography, the new BARC system requires a fast etch rate to reduce etch bias during BARC-opening process with plasma. Designing of fast-etch material could be accomplished with utilization of the widely-used model of Ohnishi parameters (O.P.), while designed material revealed the trade-off between etch rate and solubility in organic solvents. In this paper, the design of the material as well as the problem-solving process to address and resolve the trade-off between the desired properties as BARC and the accompanying problems.
机译：随着植入过程的图案尺寸降低，KRF光刻已经在MicroOpatterns的实现中达到了限制，呼叫开关到ARF光刻。更好分辨率的波长的变化导致了图案化材料的发展。结果，需要使用ARF光刻图案化的新底抗折射涂层（BARC）的开发是必要的。除了用于控制具有ARF光刻的光学性质的所需发色团之外，新的BARC系统需要快速蚀刻速率以减少具有等离子体的条形开口过程中的蚀刻偏压。快速蚀刻材料的设计可以通过利用广泛使用的OHNISHI参数（O.P.）来实现，而设计的材料在有机溶剂中揭示了蚀刻速率和溶解度之间的折衷。在本文中，材料的设计以及解决方法来解决和解决所需特性之间的折衷和解决条形和随附的问题。

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