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首页> 外文期刊>Journal of Sol-Gel Science and Technology >Effect of Gd3+ doping on key structural, morphological, optical, and electrical properties of CdO thin films fabricated by spray pyrolysis using perfume atomizer
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Effect of Gd3+ doping on key structural, morphological, optical, and electrical properties of CdO thin films fabricated by spray pyrolysis using perfume atomizer

机译：GD3 +掺杂对通过香水雾化剂喷雾热解制的CDO薄膜的关键结构，形态学，光学和电性能的影响

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摘要

Gadolinium-doped cadmium oxide (CdO) thin films were fabricated by spray pyrolysis technique using a perfume atomizer on the glass and silicon substrates at 350 A degrees C. The effect of increasing Gd concentration on the electrical, morphological, optical, and structural properties of deposited films was analyzed. Structural analysis of the pristine and doped CdO thin films showed cubic structures with preferred orientation of (200) direction. The estimated crystallite values ranged from 15 to 21 nm. The structural parameters like dislocation density, microstrain, a number of crystallites per unit area, and texture coefficient were also studied. Scanning electron microscope (SEM) images showed uniformly oriented and cauliflower-like nanostructures grown on the glass substrate for 3at.%-doped CdO films. The doped films' optical transmittance is found to be initially increased and systematically decreased with respect to doping concentrations. The band gap value is in the range of 2.42-2.30 eV for various Gd-doping concentrations (0, 1, 3, and 5%), respectively. The photoluminescence spectra (PL) of films were studied at room temperature and confirms the visible and green emission' peaks are at wavelength 463 and 528 nm, respectively. From the Hall Effect studies, it proved that all the CdO films belong to an n-type degenerate semiconductor, and the low electrical resistivity value was around 3.64 x 10(-4) a"broken vertical bar cm. The n-CdO/p-Si structure with different doping concentrations was subjected to photoconductivity studies and found that it is the maximum of 3% Gd concentration. Higher values of photo responsivity and quantum efficiency was found 365 mA/W and 76.64%, respectively, for 3at.% Gd-doped CdO films.
机译：通过在350℃下使用香水雾化器在玻璃和硅基板上的喷雾热解技术制造钆掺杂的氧化镉（CDO）薄膜。增加Gd浓度对电气，形态，光学和结构性质的影响分析了沉积的薄膜。原始和掺杂CDO薄膜的结构分析显示了（200）方向优选取向的立方结构。估计的微晶值范围为15至21nm。还研究了脱位密度，微陶器，每单位面积多个微晶和纹理系数等结构参数。扫描电子显微镜（SEM）图像显示为3AT的玻璃基板上生长的均匀定向和花椰菜状纳米结构。％掺杂的CDO膜。发现掺杂的薄膜的光学透射率最初增加并相对于掺杂浓度系统地降低。带隙值分别为各种GD掺杂浓度（0,1,3和5％）的2.42-2.30eV。在室温下研究了薄膜的光致发光光谱（PL），并确认可见光和绿色排放的峰值分别处于波长463和528nm。从霍尔效应研究中，证明所有CDO膜都属于n型退化半导体，电阻率值约为3.64×10（4）个“破损的垂直条。N-CDO / P.对具有不同掺杂浓度的-SI结构进行光电导研究，发现它最多3％GD浓度。为3AT的365mA / W和76.64％分别发现了较高的照片响应性和量子效率。％GD - 掺杂的CDO电影。

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