MEID: reliable nonvolatile memory concept using nano-dot storage node

To Mo Yuki Ishii; Taro Osabe; Toshiyuki Mine; Fumio Murai; Kazuo Yano

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MEID: reliable nonvolatile memory concept using nano-dot storage node

机译：MEID：使用纳米点存储节点可靠的非易失性记忆概念

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The origin of device characteristic deviations of single or few electron memory, which is the most serious obstacle to achieve practical memory, is studied and is compared to fabricated memory cells of various dot radius and densities. The potential to achieve Gb class memory is demonstrated and its benefits MEID are proposed.

机译：研究了单个或少数电子存储器的设备特征偏差的起源，这是实现实际存储器的最严重障碍，并与各种点半径和密度的制造存储器电池进行比较。展示了实现GB级存储器的潜力，并提出了其优势Meid。

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《電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices》 |2002年第3期|共3页
作者
To Mo Yuki Ishii; Taro Osabe; Toshiyuki Mine; Fumio Murai; Kazuo Yano;
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作者单位

Project Leader Animal Health and Welfare Cheshire County Council;

Project Leader Animal Health and Welfare Cheshire County Council;

Project Leader Animal Health and Welfare Cheshire County Council;

Project Leader Animal Health and Welfare Cheshire County Council;

Project Leader Animal Health and Welfare Cheshire County Council;

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原文格式 PDF
正文语种 jpn
中图分类微电子学、集成电路（IC）;
关键词
Na no-dot; Nonvolatile memory;

机译：na no-dot;非易失性记忆;

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专利

1. MEID: reliable nonvolatile memory concept using nano-dot storage node [J] . To Mo Yuki Ishii, Taro Osabe, Toshiyuki Mine, 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002,第3期

机译：MEID：使用纳米点存储节点的可靠非易失性存储器概念
2. Overcoming the 'retention vs. voltage' trade-off in nonvolatile organic memory: Ag nanoparticles covered with dipolar self-assembled monolayers as robust charge storage nodes [J] . Seungwon Lee, Jinhwan Lee, Hyunsoo Lee, Organic Electronics . 2013,第12期

机译：克服非易失性有机存储器中的“保留与电压”折衷：Ag纳米粒子覆盖有偶极自组装单层作为坚固的电荷存储节点
3. Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors [J] . David J. Baek, Myeong-Lok Seol, Sung-Jin Choi, Applied Physics Letters . 2012,第9期

机译：氧化石墨烯作为纳米线场效应晶体管中电荷存储节点的非易失性存储器
4. First-principles study on new media/memory materials and design concept for nonvolatile data storage [C] . Shen L., Bai Z. Q., Goh J. Q., Asia-Pacific Magnetic Recording Conference 2012 : Digest. . 2012

机译：非易失性数据存储的新介质/存储材料和设计概念的第一性原理研究
5. Data representation for efficient and reliable storage in flash memories [D] . Wang, Yue 2013

机译：数据表示，可高效，可靠地存储在闪存中
6. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism [O] . Ye Zhou, Su-Ting Han, Prashant Sonar, -1

机译：受控双极性电荷陷阱机制的非易失性多级数据存储存储设备
7. Fast and reliable storage using a 5 bit, nonvolatile photonic memory cell [O] . Xuan Li, Nathan Youngblood, Carlos Ríos, 2018

机译：使用5位非易失性光子存储器单元快速可靠的存储

MEID: reliable nonvolatile memory concept using nano-dot storage node

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