Design, implementation and measurement of a 120 GHz 10 Gb/s phase-modulating transmitter in 65 nm LP CMOS

Noel Deferm; Patrick Reynaert

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Design, implementation and measurement of a 120 GHz 10 Gb/s phase-modulating transmitter in 65 nm LP CMOS

机译：在65 nm LP CMOS中设计，实现和测量120 GHz 10 Gb / s调相发射机

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A novel mm-wave phase modulating transmit architecture, capable of achieving data rates as high as 10 Gb/s is presented at 120 GHz. The circuit operates at a frequency of 120 GHz. The modulator consists of a differential branchline coupler and a high speed 4-to-1 analog multiplexer with direct digital input. Both a QPSK as well as a 8QAM constellation are supported. To achieve high output power, a 9-stage power amplifier is designed and connected to the multiplexer output. The complete chip is integrated in a 65 nm low power CMOS technology. Capacitive neutralization is used to achieve high gain and good stability for the MOS devices. Also, various differential transmission line topologies are investigated to achieve high performance in terms of loss and area consumption.

机译：在120 GHz频率下，提出了一种新颖的毫米波相位调制发射架构，该架构能够实现高达10 Gb / s的数据速率。该电路的工作频率为120 GHz。该调制器由一个差分支线耦合器和一个带直接数字输入的高速4比1模拟多路复用器组成。支持QPSK和8QAM星座。为了获得高输出功率，设计了9级功率放大器并将其连接到多路复用器输出。完整的芯片集成在65 nm低功耗CMOS技术中。电容中和被用于实现MOS器件的高增益和良好的稳定性。另外，研究了各种差分传输线拓扑，以实现损耗和面积消耗方面的高性能。

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《Analog Integrated Circuits and Signal Processing》 |2013年第1期|共19页
作者
Noel Deferm; Patrick Reynaert;
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正文语种 eng
中图分类半导体集成电路（固体电路）;
关键词
Millimeter-wave; CMOS; RF front end; 65 nm; D-band;

机译：毫米波;CMOS;RF前端;65nm;D波段;

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1. Verilog HDL modeling and design of 10Gb/s SerDes full rate CDR in 65nm CMOS [J] . Chen Yingmei, Chen Xuehui, Yi Lvfan, 高技术通讯（英文版） . 2014,第002期
2. A 40 Gb/ s SerDes Transceiver Chip with Controller and PHY in a 65 nm CMOS Technology [J] . Fangxu Lü, Jianye Wang, Xuqiang Zheng, 哈尔滨工业大学学报（英文版） . 2019,第003期
3. Design of 15 Gb/s inductorless limiting amplifier with RSSI and LOS indication in 65nm CMOS [J] . Chen Yingmei, Xu Zhigang, Wang Tao, 高技术通讯（英文版） . 2014,第001期
4. Design, implementation and measurement of a 120 GHz 10 Gb/s phase-modulating transmitter in 65 nm LP CMOS [J] . Noel Deferm, Patrick Reynaert Analog Integrated Circuits and Signal Processing . 2013,第1期

机译：在65 nm LP CMOS中设计，实现和测量120 GHz 10 Gb / s调相发射机
5. A T-Coil-Enhanced 8.5 Gb/s High-Swing SST Transmitter in 65 nm Bulk CMOS With $≪ -$16 dB Return Loss Over 10 GHz Bandwidth [J] . Kossel M., Menolfi C., Weiss J., IEEE Journal of Solid-State Circuits . 2008,第12期

机译：T型线圈增强型8.5 Gb / s高频率SST发送器，采用65 nm批量CMOS，在10 GHz带宽上具有$≪-$ 16 dB的回波损耗
6. A 120 GHz Fully Integrated 10 Gb/s Short-Range Star-QAM Wireless Transmitter With On-Chip Bondwire Antenna in 45 nm Low Power CMOS [J] . Deferm N., Reynaert P. Solid-State Circuits, IEEE Journal of . 2014,第7期

机译：具有45 nm低功耗CMOS的片上键合线天线的120 GHz全集成10 Gb / s短程Star-QAM无线发射机
7. A 120GHz 10Gb/s phase-modulating transmitter in 65nm LP CMOS [C] . Deferm Noel, Reynaert Patrick 2011 IEEE International Solid-State Circuits Conference Digest of Technical Papers . 2011

机译：65nm LP CMOS中的120GHz 10Gb / s调相发射机
8. A 57–65GHz re-configurable CMOS mQAM transmitter and transformer-coupled power amplifier based on a digitally controlled artificial dielectric [D] . LaRocca, Timothy Richard 2009

机译：基于数控人工介电层的57-65GHz可重配置CMOS mQAM发射机和变压器耦合功率放大器
9. Design of a Low-Power Small-Area AEC-Q100-Compliant SENT Transmitter in Signal Conditioning IC for Automotive Pressure and Temperature Complex Sensors in 180 Nm CMOS Technology [O] . Imran Ali, Behnam Samadpoor Rikhan, Dong-Gyu Kim, 2018

机译：用于汽车压力和温度复合传感器的信号调理IC中采用180 Nm CMOS技术的低功耗小面积符合AEC-Q100标准的SENT发送器的设计
10. Design, implementation and measurement of a 120 GHz 10 Gb/s phase-modulating transmitter in 65 nm LP CMOS [O] . Deferm Noël, Reynaert Patrick 2013

机译：在65 nm LP CMOS中设计，实现和测量120 GHz 10 Gb / s调相发射机

Design, implementation and measurement of a 120 GHz 10 Gb/s phase-modulating transmitter in 65 nm LP CMOS

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