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首页> 外文期刊>Analog Integrated Circuits and Signal Processing >Fully integrated 1.2-μA and 13-μA quiescent current LDOs with improved transient response
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Fully integrated 1.2-μA and 13-μA quiescent current LDOs with improved transient response

机译：完全集成的1.2μA和13μA静态电流LDO，具有改善的瞬态响应

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摘要

We introduce two extremely low quiescent current (I_Q) low-dropout (LDO) voltage regulators. The Low I_Q-LDO (LI_Q-LDO) uses 13 μA of total quiescent current and is designed for a maximum load current of 50 mA. The Micro I_Q-LDO (MI_Q-LDO) uses only 1.2 μA of total quiescent current and is designed for a maximum load current of 5 mA. Detailed pole/zero analysis is performed to aid in the design of the LDOs. Two LHP zeros cancel the two non-dominant poles which extend the bandwidth and improve transient response. Both designs are fully integrated, stabilized with an on-chip capacitive load of 100 pF. In load transient, the total variation in output voltage for LI_Q-LDO and MI_Q-LDO is 1 V and 950 mV, respectively, and the total line transient variation is 668 and 599 mV, respectively. Both designs occupy an area of 0.26 mm~2 in a 0.5-μm CMOS process. Two process-independent figures of merit are proposed to compare LI_Q-LDO and MI_Q-LDO with other published work.
机译：我们介绍了两个极低的静态电流（I_Q）低压降（LDO）稳压器。低I_Q-LDO（LI_Q-LDO）消耗的总静态电流为13μA，设计用于50 mA的最大负载电流。微型I_Q-LDO（MI_Q-LDO）仅使用1.2μA的总静态电流，并设计为最大负载电流为5 mA。进行详细的零点/零点分析有助于LDO的设计。两个LHP零点会抵消两个非主导极点，从而扩展了带宽并改善了瞬态响应。两种设计均完全集成，并通过100 pF的片上容性负载稳定。在负载瞬变中，LI_Q-LDO和MI_Q-LDO的输出电压总变化分别为1 V和950 mV，总线路瞬变变化分别为668和599 mV。两种设计在0.5μmCMOS工艺中的面积均为0.26 mm〜2。提出了两个与过程无关的优点，以将LI_Q-LDO和MI_Q-LDO与其他已发表的作品进行比较。

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