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首页> 外文期刊>Analog Integrated Circuits and Signal Processing >Program and verify word-line voltage regulator for multilevel flash memories
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Program and verify word-line voltage regulator for multilevel flash memories

机译：编程和验证用于多级闪存的字线稳压器

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摘要

This paper presents a word-line voltage generator for multilevel (ML) Flash memory programming. The required voltages are provided by a regulator supplied by an on-chip charge-pump voltage multiplier. A feedback loop including a digitally programmable resistive divider generates the staircase-shaped waveform needed for adequate ML programming accuracy as well as the read/verify voltage required for read and verify operations. A high-swing controlled-discharge circuit minimizes the settling time when switching from program to verify phases and vice versa. The same generator is used to provide the voltage required in read and in program mode, thus saving silicon area and minimizing current consumption. Experimental results of the proposed circuit integrated in a 4-level-cell 64-Mb NOR-type Flash memory are presented.
机译：本文提出了一种用于多级（ML）闪存编程的字线电压发生器。所需的电压由片上电荷泵电压倍增器提供的稳压器提供。包含数字可编程电阻分压器的反馈环路会生成阶梯形波形，以实现足够的ML编程精度，以及读取和验证操作所需的读取/验证电压。从程序切换到验证阶段，反之亦然，高摆幅控制放电电路可将建立时间降至最短。使用同一发生器来提供读取和编程模式下所需的电压，从而节省了硅片面积并最小化了电流消耗。提出了该电路在4级单元64 Mb NOR型闪存中集成的实验结果。

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