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首页> 外文期刊>CERAMICS INTERNATIONAL >Structural and dielectric properties of B2O3/Li2O-added Ba0.6Sr0.4TiO3 multilayer ceramics for tunable devices
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Structural and dielectric properties of B2O3/Li2O-added Ba0.6Sr0.4TiO3 multilayer ceramics for tunable devices

机译：B2O3 / Li 2 O添加的Ba0.6SR0.4TiO3可调谐装置的结构和介电性能

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B2O3 and Li2O (B/L)-added Ba0.6Sr0.4TiO3 (BST) ceramics sintered at 940 degrees C exhibited a dense microstructure with large grains. The amount of B/L additive was 4.5 wt% with a B/L ratio of 1.5:1. The B/L-related liquid phase assisted the densification of the BST ceramics. This BST ceramic displayed a large dielectric constant (epsilon(r)) of 2834 with a low dielectric loss (tan delta) of 0.21% at 1.0 MHz. It also displayed a large tunability (28.2% at 10 kV/cm) and a high figure of merit (FOM) of 134. BST thick-films were synthesized using the tape casting method. The thick-film densified at 940 degrees C exhibited a large tunability of 18.7% at 10.0 kV/cm and an FOM of 208; these are higher than the values reported in the literature. Multilayer ceramics (MLCs) consisting of five layers of 40-mu m-thick BST thick-films and Ag electrodes were also fabricated at 940 degrees C. No diffusion occurred between the Ag electrode and BST thick-film. A large tunability of 67.6% at 52 kV/cm with a high FOM of 294 was obtained from this MLC. This verified that the B/L-added BST ceramic is effective for application in tunable multilayer devices.
机译：B2O3和Li2O（B / L） - 940℃烧结的Ba0.6SR0.4TiO3（BST）陶瓷烧结，具有大晶粒的致密微观结构。 B / L添加剂的量为4.5wt％，B / L比为1.5：1。 B / L相关液相辅助BST陶瓷的致密化。该BST陶瓷显示出2834的大介电常数（ε（R）），其低介电损耗（Tan Delta）为0.21％，在1.0MHz。它还显示出大的可调性（10kV / cm，28.2％），并且使用胶带铸造方法合成BST厚膜的高值（FOM）。在940℃下致密致密的厚膜表现出10.0kV / cm处的18.7％的较大可调性和208的FOM;这些高于文献中报告的值。多层陶瓷（MLC）由五层40-mu m厚的BST厚膜和Ag电极组成，也在940℃下制造。在Ag电极和BST厚膜之间没有发生扩散。该MLC获得52 kV / cm的52 kV / cm处的67.6％的较大可调性。这验证了B / L添加的BST陶瓷对于可调多层器件中的应用是有效的。

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