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首页> 外文期刊>CERAMICS INTERNATIONAL >The optical and electrical properties of ZnO:Al thin films deposited at low temperatures by RF magnetron sputtering
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The optical and electrical properties of ZnO:Al thin films deposited at low temperatures by RF magnetron sputtering

机译：ZnO：Al薄膜的光学和电性能沉积在低温下通过RF磁控溅射沉积在低温下

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摘要

Several ZnO:Al thin films have been successfully deposited on glass substrates at different substrate temperatures by RF (radio frequency) magnetron sputtering method. Effects of the substrate temperatures on the optical and electrical properties of these ZnO:Al thin films were investigated. The UV-VIS-NIR spectra of the ZnO:Al thin films revealed that the average optical transmittances in the visible range are very high, up to 88%. X-ray diffraction results showed that crystallization of these films was improved at higher substrate temperature. The band gaps of ZnO:Al thin films deposited at 25 degrees C, 150 degrees C, 200 degrees C, and 250 degrees C are 3.59 eV, 3.55 eV, 3.53 eV, and 3.48 eV, respectively. The Hall-effect measurement demonstrated that the electrical resistivity of the films decreased with the increase of the substrate temperature and the electrical resistivity reached 1.990 x 10(-3) Omega cm at 250 degrees C.
机译：几种ZnO：Al薄膜通过RF（射频）磁控溅射法成功地沉积在不同基板温度下的玻璃基板上。 研究了基板温度对这些ZnO：Al薄膜的光学和电性能的影响。 ZnO：Al薄膜的UV-Vis-niR光谱显示出可见范围中的平均光学透射率非常高，高达88％。 X射线衍射结果表明，在较高的衬底温度下改善了这些薄膜的结晶。 ZnO：Al薄膜的带间隙分别为25℃，150℃，200摄氏度和250℃，3.55eV，3.53eV和3.48eV分别为3.59eV。 霍尔效应测量表明，薄膜的电阻率随衬底温度的增加而降低，电阻率达到1.990×10（-3）ωcm，在250℃下达到1.990×10（3）厘米。

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