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首页> 外文期刊>Chemistry: A European journal >Ultrahigh Average Thermoelectric Figure of Merit, Low Lattice Thermal Conductivity and Enhanced Microhardness in Nanostructured (GeTe)_x(AgSbSe_2)_(100-x)
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Ultrahigh Average Thermoelectric Figure of Merit, Low Lattice Thermal Conductivity and Enhanced Microhardness in Nanostructured (GeTe)_x(AgSbSe_2)_(100-x)

机译：超高平均热电值的优点，低晶格导热系数和纳米结构（GetE）_x（AGSBSE_2）_（100-x）的增强的微硬度

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摘要

Waste heat sources are generally diffused and provide a range of temperatures rather than a particular temperature. Thus, thermoelectric waste heat to electricity conversion requires a high average thermoelectric figure of merit (ZT_(avg)) of materials over the entire working temperature along with a high peak thermoelectric figure of merit (ZT_(max)). Herein an ultrahigh ZT_(avg) of 1.4 for (Ge- Te)_(80)(AgSbSe_2)_(20) [TAGSSe-80, T=tellurium, A=antimony, G=germanium, S=silver, Se=selenium] is reported in the temperature range of 300–700 K, which is one of the highest values measured amongst the state-of-the-art Pbfree polycrystalline thermoelectric materials. Moreover, TAGSSe-80 exhibits a high ZT_(max) of 1.9 at 660 K, which is reversible and reproducible with respect to several heating– cooling cycles. The high thermoelectric performance of TAGSSe-x is attributed to extremely low lattice thermal conductivity (κ_(lat)), which mainly arises due to extensive phonon scattering by hierarchical nano/meso-structures in the TAGSSe-x matrix. Addition of AgSbSe_2 in GeTe results in κ_(lat) of &0.4 WmK~(-1) in the 300–700 K range, approaching to the theoretical minimum limit of lattice thermal conductivity (kmin) of GeTe. Additionally, (Ge- Te)_(80)(AgSbSe_2)_(20) exhibits a higher Vickers microhardness (mechanical stability) value of &209 kgfmm~(-2) compared to the other state-of-the-art metal chalcogenides, making it an important material for thermoelectrics.
机译：废热源通常漫射并提供一系列温度而不是特定温度。因此，热电余热与电力转换需要在整个工作温度范围内的高峰值热电图（ZT_（MAX））中的高平均热电值（ZT_（AVG））的优点（ZT_（AVG））。这里的超高ZT_（AVG）为（GE-TE）_（80）（AGSBSE_2）_（20）[TAGSSE-80，T =碲，A =锑，G =锗，S =银，SE =硒报道了在300-700k的温度范围内，这是最先进的PBFree多晶热电材料中测量的最高值之​​一。此外，TAGSSE-80在660 k下表现出1.9的高ZT_（最大值），其相对于几个加热冷却循环是可逆和可再现的。 Tagsse-X的高热电性能归因于极低的晶格导热率（κ_（LAT）），其主要是由于TAGSSE-X矩阵中的分层纳米/中间结构的广泛声子散射而产生的。在300-700 k范围内的κ_（lat）的GetE中的Agsbse_2中的Agsbse_2在κ_（lat）的范围内，接近Gete的晶格导热系数（Kmin）的理论最小限制。此外，（GE-TE）_（80）（AGSBSE_2）_（20）表现出较高的维持器微硬度（机械稳定性）值和209kgfmm〜（-2）相比，而与其他最先进的金属硫属元素化物相比，使其成为热电学的重要材料。

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  • 来源
    《Chemistry: A European journal》 |2017年第31期|共6页
  • 作者

    Manisha Samanta; Subhajit Roychowdhury; Jay Ghatak; Suresh Perumal; Kanishka Biswas;

  • 作者单位

    New Chemistry Unit &

    International Center for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur Bangalore (India);

    New Chemistry Unit &

    International Center for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur Bangalore (India);

    New Chemistry Unit &

    International Center for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur Bangalore (India);

    New Chemistry Unit &

    International Center for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur Bangalore (India);

    New Chemistry Unit &

    International Center for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur Bangalore (India);

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用化学;
  • 关键词

    chalcogenides; mechanical stability; nanostructures; thermal conductivity; thermoelectric;

    机译：硫属化物;机械稳定性;纳米结构;导热率;热电;

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