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首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >A way to improve the uniformity of nanometer-thickness graphite film synthesized on polycrystalline Ni substrate: From large grain to small grain
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A way to improve the uniformity of nanometer-thickness graphite film synthesized on polycrystalline Ni substrate: From large grain to small grain

机译：一种改善多晶Ni衬底合成的纳米厚石墨膜均匀性的方法：从大谷物到小谷物

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摘要

A pellicle is an important part of mask protection in extreme ultraviolet (EUV) lithography, and nanometer-thickness graphite film (NGF) is an ideal material for pellicle fabrication. In our previous work, we synthesized large-scale NGF on polycrystalline Ni foil by a "two-stage" chemical vapor deposition process with an EUV transmittance of 79 +/- 2%. The nonuniformity of EUV transmittance is mainly caused by the thicker NGF formed on the Ni grain boundaries (GBs). Here, we present a simple and cost-effective method to weaken the effects of the Ni GBs by sputtering thin Ni films onto Ni foils. The Ni film provides smaller grains with high GB density so that the non-uniformity of NGFs caused by Ni GBs was averaged out by the large EUV beam size. We investigated the grain growth of Ni films with different thicknesses, and 1-mu m Ni film/Ni foil had the minimum average grain size of similar to 6 mu m. The NGF synthesized on it showed a higher EUV transmittance with better uniformity of 86.3 +/- 0.9%. Fullerenic C-C and sp(3) C-C bonding were detected by the X-ray photoelectron spectroscopy, and the NGF on the Ni GBs showed a higher defect density. (C) 2018 Elsevier Ltd. All rights reserved.
机译：薄膜是极端紫外（EUV）光刻中掩模保护的重要组成部分，纳米厚度石墨膜（NGF）是薄膜制造的理想材料。在我们以前的工作中，我们通过“两阶段”化学气相沉积工艺在多晶体Ni箔上综合大规模NGF，EUV透射率为79 +/- 2％。 EUV透射率的不均匀性主要由在Ni晶界（GBS）上形成的厚NGF引起。在这里，我们提出了一种简单且经济有效的方法，以通过将薄的Ni薄膜溅射到Ni箔上来削弱Ni Gbs的效果。 Ni薄膜提供具有高GB密度的较小晶粒，使得由Ni GBS引起的NGF的不均匀性通过大的EUV光束尺寸进行平均。我们研究了具有不同厚度的Ni膜的晶粒生长，1-mu m ni薄膜/ ni箔的最小平均晶粒尺寸与6μm相似。合成的NGF在其上显示出更高的EUV透射率，具有86.3 +/- 0.9％的更好均匀性。通过X射线光电子能谱检测富烯烃C-C和SP（3）C-C键合，Ni GBS上的NGF显示出更高的缺陷密度。 （c）2018年elestvier有限公司保留所有权利。

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