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Influence of fabrication processes on transport properties of superconducting niobium nitride nanowires

机译:制造工艺对超导氮化铌纳米线传输性能的影响

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摘要

Fabrication of niobium nitride (NbN) superconducting nanowires based on focused ion beam (FIB) milling and electron beam lithography (EBL) is presented. The NbN films were deposited using reactive magnetron sputtering. Argon-to-nitrogen ratio turned out to be a crucial factor in synthesizing high quality superconducting NbN. Critical temperatures (T-c) of around 15.5 K were measured for films with a thickness of around 10 nm. Zero-field-cooled magnetization was measured to optimize the superconducting properties of ultra thin NbN films. The transport behaviour was studied using conventional resistance vs temperature and current-voltage characteristics down to 2 K. Effect of gallium contamination on superconducting properties has been discussed. Whereas the various processing steps of standard EBL route do not have any significant impact on the superconducting transition temperature as well as on the transition width of nanowires, there is significant degradation of superconducting properties of nanowires prepared using FIB. This has been attributed to gallium ion implantation across the superconducting channel. Although the effect of gallium implantation may have technological limitations in designing fascinating single photon detector architectures, it provides some interesting low-dimensional superconducting properties.
机译:提出了基于聚焦离子束(FIB)铣削和电子束光刻(EBL)的基于聚焦离子束(FIB)的氮化铌(NBN)超导纳米线的制备。使用反应性磁控溅射沉积NBN膜。氩气率先是合成高质量超导NBN的关键因素。测量厚度为约10nm的薄膜的临界温度(t-c)约15.5k。测量零场冷磁化以优化超薄NBN膜的超导性能。使用常规电阻Vs温度和电流 - 电压特性研究了运输行为,下降至2k。讨论了镓污染对超导特性的影响。虽然标准EBL途径的各种处理步骤对超导转变温度以及纳米线的过渡宽度没有任何显着的影响,但是使用FIB制备的纳米线的超导性能显着降低。这归因于超导通道的镓离子注入。尽管镓植入的效果可以在设计迷人的单光子探测器架构方面具有技术限制,但是它提供了一些有趣的低维超导特性。

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