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首页> 外文期刊>Crystal growth & design >Purification and Improved Nuclear Radiation Detection of Tl6SI4 Semiconductor
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Purification and Improved Nuclear Radiation Detection of Tl6SI4 Semiconductor

机译：TL6SI4半导体的净化和改进的核辐射检测

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摘要

The wide-band-gap semiconductor Tl6SI4 (2.14 eV) has high photon stopping power and is a promising material for detecting X-rays. In order to improve its photoresponse to low-flux gamma-rays, material purification prior to crystal growth is crucial. In this contribution, we report effective purification protocols, impurity analysis, followed by synthesis and crystal growth, charge transport, and detector performance of large-sized Tl6SI4 crystals. Purification methods of evaporation and zone refining were developed, and their high effectiveness was confirmed by impurity analysis via glow discharge mass spectrometry. Centimeter-sized single crystals were grown using the Bridgman method. The improved properties after material purification were confirmed by photoluminescence measurements. The energy of the valence band maximum of a Tl6SI4, measured with photoemission spectroscopy in air (PESA), is similar to 5.34 +/- 0.05 eV. Detector devices fabricated from the single crystal exhibit a high resistivity of 5 x 10(12) Omega.cm. The detector shows promising photoresponse under 22.4 keV Ag K alpha X-rays and 122 keV gamma-rays from Co-57. Spectroscopic energy resolution was achieved for 5.5 MeV alpha-particles from a Am-241 radiation source with a full width at half-maximum of 27% at an electric field intensity of 2500 V.cm(-1). On the basis of its spectral response to Co-57 gamma-rays, the electron mobility-lifetime product mu(e)tau(e) was estimated as 1.4 x 10(-5) cm(2).V-1. Drift mobility measurements via a time-of-flight technique using spectral photoresponse induced by alpha-particles reveal a high electron mobility of 35 +/- 7 cm(2).V-1.s(-1).
机译：宽带间隙半导体TL6SI4（2.14eV）具有高光子停止功率，并且是用于检测X射线的有希望的材料。为了改善其光响应到低通量γ射线，在晶体生长之前的材料纯化至关重要。在这一贡献中，我们报告了有效的纯化方案，杂质分析，然后是合成和晶体生长，电荷输送和大型TL6SI4晶体的检测器性能。开发出蒸发和区域精制的纯化方法，通过杂质分析通过辉光放电质谱法确认了它们的高效性。使用Bridgman方法生长厘米大小的单晶。通过光致发光测量证实了材料纯化后的改善性质。用空气（PESA）中的摄影光谱法测量的TL6SI4的价带的最大能量类似于5.34 +/- 0.05eV。由单晶制造的检测器装置具有5×10（12）ωCM的高电阻率。检测器显示出于22.4keV AgKαX射线的有前景光响应，以及来自CO-57的122keV伽马射线。从AM-241辐射源的5.5mEVα-颗粒实现光谱能量分辨率，在2500 Vmm（-1）的电场强度下的半最大值为27％。在其对CO-57γ射线的光谱响应的基础上，电子迁移率 - 寿命产品MU（E）TAU（E）估计为1.4×10（ - 5 )cm（2）.v-1。使用由α-颗粒诱导的光谱光响应的飞行时间技术漂移迁移率测量显示高电子迁移率为35 +/- 7cm（2）.v-1.s（-1）。

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