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首页> 外文期刊>Crystal growth & design >Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11-22) GaN Template
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Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11-22) GaN Template

机译:紧张周期多层对半极(11-22)GaN模板的表面和晶体质量的影响

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摘要

Efficient reduction of defects and dislocations in a semipolar (11-22) GaN epilayer with the use of an AlN/GaN strained periodic multilayer is demonstrated. On- and off-axis X-ray rocking curve analyses have shown significant improvement in the crystalline qualities with remarkable narrowing in their respective full width at half-maximum upon utilization of increased AlN/GaN pairs. X-ray reciprocal space mapping revealed a prominent increment in the degree of relaxation state, with notable shrinkage in the diffuse scattering streak. Structural evaluation via transmission electron microscopey illuminates the interruption of defect and dislocation propagation due to the strained periodic multilayers. It was observed that the first 20th pairs exhibited a three-dimensional growth mode owning to numerous defects originating from the AlN/sapphire interface. Such a phenomenon was found to have a positive impact toward accumulating the propagation of defects. The surface morphology analysis elucidates the reduced stripe-like undulations, whereby the terrace-like features in the lower scales endured an enhanced rearrangement favoring the reduced defect density.
机译:证实了使用ALN / GaN紧张的周期性多层的半极(11-22)GaN癫痫术中的缺陷和脱位的有效减少。在轴上和轴X射线摇摆曲线分析中显示出晶体质量的显着改善,在使用增加的AlN / GaN对时,在其各自的全宽度下具有显着缩小的晶体品质。 X射线往复式空间映射在弛豫状态下显示出突出的增量,在漫射散射条纹中具有显着的收缩。通过透射电子显微镜的结构评估照亮了由于应变的周期多层引起的缺陷和位错传播的中断。观察到第20次成对表现出三维生长模式,其具有来自ALN / SAPPHIRE界面的许多缺陷。发现这种现象具有积极的影响,朝着积累缺陷的繁殖。表面形态分析阐明了降低的条纹状的起伏,由此较低尺度中的露台特征耐受增强的重排,偏好的缺陷密度降低。

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