...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Crystal growth & design >Dynamic Mechanical and Electric Behaviors of La-Doped BiVO4
【24h】

Dynamic Mechanical and Electric Behaviors of La-Doped BiVO4

机译：La-Doped Bivo4的动态机械和电动行为

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Bismuth vanadate (BiVO4) is an important semiconductor with wide applications, but in-depth understanding of its fundamental dynamic behaviors is still lacking. To address this issue, the comprehensive analysis of structure, internal friction (IF), modulus, dielectric, and impedance spectra was employed to unambiguously disclose the dynamic mechanical and electric behaviors for a series of Bi1-xLaxVO4 ceramics (0 = x = 0.15). In sensitive mechanical measurement, five IF peaks, corresponding modulus anomalies and high-temperature creep behavior, have been observed in our Bi1-xLaxVO4 ceramics. Through analyzing their related kinetic parameters, defect formations and evolution processes, the complex evolution model of ferroelastic domains including four different stages, and the origin of grain boundary relaxation are well established. As for the electric experiment, there are two apparently different activation processes in low and high temperature regions, respectively. In conjunction with structural and mechanical characterizations, we confirm that the mixed electric/oxide ionic conduction dominates from 433 to 633 K, undergoing a structural change (633-673 K) to the complicated defect conduction at higher temperatures (673-833 K). Our findings smooth the path for better realization of the fundamental dynamic behaviors as well as extending practical applications of BiVO4-based materials.
机译：铋钒酸盐（BIVO4）是一个重要的半导体，应用宽，但深入了解其基本动态行为仍然缺乏。为了解决这一问题，采用结构，内部摩擦（IF），模量，电介质和阻抗光谱的综合分析，用于明确公开了一系列BI1-XLAXVO4陶瓷（0＆ = x＆lt）的动态机械和电动行为。 ; = 0.15）。在敏感的机械测量中，在我们的BI1-XLAXVO4陶瓷中已经观察到五个IF峰值，相应的模量异常和高温蠕变行为。通过分析它们的相关动力学参数，缺陷地层和演化过程，包括四个不同阶段的铁弹性域的复杂演化模型以及晶界松弛的起源。至于电动实验，分别存在两种明显不同的激活过程和高温区域。结合结构和机械表征，我们确认混合电/氧化物离子传导占据433至633k，在较高温度下进行结构变化（633-673k），在较高温度下（673-833k）。我们的研究结果平滑了路径，以更好地实现基础动态行为以及扩展基于Bivo4的材料的实际应用。

著录项

  • 来源
    《Crystal growth & design》 |2019年第1期|共10页
  • 作者

    Lin He; Zhang Haitao; He Xiang; Xu Wentao; Zhou Youfu; Yi Zhiguo;

  • 作者单位

    Chinese Acad Sci Fujian Inst Res Struct Matter CAS Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Southwest Jiaotong Univ Sch Mat Sci &

    Engn Minist Educ Key Lab Adv Technol Mat Chengdu 610031 Sichuan Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter CAS Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter CAS Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter CAS Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

    Chinese Acad Sci Fujian Inst Res Struct Matter CAS Key Lab Optoelect Mat Chem &

    Phys Fuzhou 350002 Fujian Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号