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首页> 外文期刊>Crystal growth & design >14(Au, M)51 (R = Y, La–Nd, Sm–Tb, Ho, Er, Yb, Lu; M = Al, Ga, Ge, In, Sn, Sb, Bi): Stability Ranges and Site Preference in the Gd14Ag51 Structure Type]]>
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14(Au, M)51 (R = Y, La–Nd, Sm–Tb, Ho, Er, Yb, Lu; M = Al, Ga, Ge, In, Sn, Sb, Bi): Stability Ranges and Site Preference in the Gd14Ag51 Structure Type]]>

机译:<![cdata [r 14 (au,m) 51 (r = y,la-nd,sm-tb,ho,er,yb,lu; m = Al,Ga,Ge,In,Sn,Sb,Bi):稳定性范围和Gd 14 Ag 51 结构类型]]>

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摘要

Twenty new ternary representatives of the Gd_(14)Ag_(51) structure type have been synthesized within the R-Au-M family (R = Y, La–Nd, Sm–Tb, Ho, Er, Yb, Lu; M = Al, Ga, Ge, In, Sn, Sb, Bi) using solid state synthesis techniques. The list of post transition metals (M) involved in the formation of this type of structure could be augmented by five new representatives. All compounds crystallize in the hexagonal space group P 6/ m (#175) with the unit cell ranges of a = 12.3136(2)–12.918(1) ? and c = 8.9967(3)–9.385(1) ?, and incorporate different degrees of Au/M mixing. The involvement of the post transition element in the structure varies from one to another compound both qualitatively and quantitatively. A rather significant phase width can be expected for the majority of compounds, however, not without exclusions. The distribution of the post transition metals within the structure has been analyzed via single crystal X-ray diffraction. While the positional disorder of one near-origin Au position is expectable for all compounds due to steric reasons, two specimens show an obvious deviation from the others including another Au position split along the c axis. Possible factors affecting this behavior are discussed.
机译:在R-Au-M系列(R = Y,La-Nd,SM-TB,HO,ER,YB,Lu中,已经合成了20个新的GD_(14)AG_(51)结构类型的新的三元代表。(r = y,la-nd,sm-tb,lu; m = Al,Ga,Ge,In,Sn,Sb,Bi)使用固态合成技术。参与形成这种类型结构的后过渡金属(M)清单可以增强五个新代表。所有化合物在六边形空间组p 6 / m(#175)中结晶,单位电池范围A = 12.3136(2)-12.918(1)?和C = 8.9967(3)-9.385(1)?,并包含不同程度的Au / m混合。在结构中的后转变元件的涉及从定性和定量地从一个化合物变化到另一种化合物。然而,对于大多数化合物来说,可以预期一个相当明显的相宽,而不是没有排除。通过单晶X射线衍射分析了结构内的后过渡金属的分布。虽然一个近似原因Au位置的位置障碍对于由于空间的原因而期望所有化合物,但是两个样本显示出与其他样品的明显偏离,包括沿着C轴分开的另一个Au位置。讨论了影响这种行为的可能因素。

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  • 来源
    《Crystal growth & design》 |2018年第2期|共9页
  • 作者单位

    The Ames Laboratory U.S. Department of Energy and Department of Materials Science and Engineering Iowa State University Ames Iowa 50011 United States;

    The Ames Laboratory U.S. Department of Energy and Department of Materials Science and Engineering Iowa State University Ames Iowa 50011 United States;

    The Ames Laboratory U.S. Department of Energy and Department of Materials Science and Engineering Iowa State University Ames Iowa 50011 United States;

    The Ames Laboratory U.S. Department of Energy and Department of Materials Science and Engineering Iowa State University Ames Iowa 50011 United States;

    The Ames Laboratory U.S. Department of Energy and Department of Materials Science and Engineering Iowa State University Ames Iowa 50011 United States;

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  • 正文语种 eng
  • 中图分类 晶体学;
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