<![CDATA[Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition]]>

Yuanpeng Chen; Xiaochuan Xia; Hongwei Liang; Qasim Abbas; Yang Liu; Guotong Du

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2O₃ Films on Al₂O₃ via Metal–Organic Chemical Vapor Deposition]]>

机译：<！[CDATA [CDATA [生长压力控制纯相ε-和β-GA _{2 O _{3 膜上的eAl _{2 O _{3 通过金属 - 有机化学气相沉积]]]>}}}}

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Pure ε- and β-phase gallium oxide (Ga_(2)O_(3)) films have been successfully grown on Al_(2)O_(3) (001) substrate via metal–organic chemical vapor deposition (MOCVD) at a growth temperature of 500 °C. Growth pressure controlled nucleation is the dominant controlling parameter for pure phase Ga_(2)O_(3) film growth. Due to the biaxial stress induced by lattice mismatch, heteroepitaxial ε-phase Ga_(2)O_(3) is grown on Al_(2)O_(3) by heterogeneous nucleation at low pressure. However, film growth is dominated by spherical nuclei homogeneous nucleation at a pressure higher than 100 mbar, and β-phase Ga_(2)O_(3) film is grown with a mosaic surface. The optimum pressure for the growth of pure ε-Ga_(2)O_(3) films with superior crystallinity is 35 mbar, whereas the pressure window for pure β-Ga_(2)O_(3) growth is between 100 mbar and 400 mbar. The growth rate of β-Ga_(2)O_(3) film is much lower than ε-Ga_(2)O_(3) film at high pressure. On the other hand, all Ga_(2)O_(3) films have shown good optical properties with a band gap of about 4.9 eV. This fundamental research will help to understand the mechanism of MOCVD growth involving high quality and pure phase ε- and β-Ga_(2)O_(3) film.

机译：通过金属 - 有机化学气相沉积（MOCVD）在Al_（2）O_（3）（001）衬底上成功地生长了纯ε-和β-相镓氧化物（Ga_（2）O_（3））膜，其生长温度为500°C。生长压力控制成核是纯相Ga_（2）O_（3）膜生长的主要控制参数。由于晶格错配诱导的双轴应力，通过在低压下通过异质成核来在Al_（2）O_（3）上生长异质轴ε-相荷（2）O_（3）。然而，薄膜生长以高于100毫巴的压力在压力下由球形核均匀成核来支配，并且使用马赛克表面生长β相Ga_（2）O_（3）膜。具有优异结晶度的纯ε-ga_（2）O_（3）膜的生长的最佳压力为35毫巴，而纯β-GA_（2）O_（3）生长的压力窗口在100毫巴和400毫巴之间。 β-GA_（2）O_（3）膜的生长速率远低于高压的ε-ga_（2）O_（3）膜。另一方面，所有GA_（2）O_（3）薄膜都显示出良好的光学性能，带隙约为4.9eV。这一基本研究将有助于了解涉及高质量和纯期ε-和β-GA_（2）O_（3）膜的MOCVD增长机制。

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《Crystal growth & design》 |2018年第2期|共8页
作者
Yuanpeng Chen; Xiaochuan Xia; Hongwei Liang; Qasim Abbas; Yang Liu; Guotong Du;
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School of Physics &

School of Microelectronics Dalian University of Technology Dalian 116024 People’s Republic of China;

School of Physics &

School of Microelectronics Dalian University of Technology Dalian 116024 People’s Republic of China;

School of Physics &

School of Microelectronics Dalian University of Technology Dalian 116024 People’s Republic of China;

School of Physics &

School of Microelectronics Dalian University of Technology Dalian 116024 People’s Republic of China;

School of Physics &

School of Microelectronics Dalian University of Technology Dalian 116024 People’s Republic of China;

School of Physics &

School of Microelectronics Dalian University of Technology Dalian 116024 People’s Republic of China;

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中图分类晶体学;
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1. 2O₃ Films on Al₂O₃ via Metal–Organic Chemical Vapor Deposition]]> [J] . Yuanpeng Chen, Xiaochuan Xia, Hongwei Liang, Crystal growth & design . 2018,第2期

机译：<！[CDATA [CDATA [生长压力控制纯相ε-和β-GA _{2 O _{3 膜上的eAl _{2 O _{3 通过金属 - 有机化学气相沉积]]]>}}}}
2. Optical and crystallographic properties and impurity incorporation of GaxIn1-xAs (0.44≪x≪0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition [J] . Journal of Applied Physics . 1983,第8期

机译：通过液相外延，气相外延和金属有机化学气相沉积法生长的GaxIn1-xAs（0.44≪x≪0.49）的光学和晶体学性质以及杂质掺入
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4. Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy [C] . D.B.Thomson, T.Gehrke Symposium on GaN and related alloys . 1999

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5. Nucleation and growth of thin film zirconia using pulsed-pressure metal-organic chemical vapor deposition. [D] . Ramirez, Lynher. 2008

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6. CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films [O] . Akira Kusaba, Guanchen Li, Pawel Kempisty, 2019

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机译：错误：“使用ktaxnb1-xo3中间层通过金属化学气相沉积”应用ktaxnb1-xo3中间层的“取向控制的关节3晶体薄膜的外延生长”物理。吧。 78,49（2001）

2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition]]>

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2O₃ Films on Al₂O₃ via Metal–Organic Chemical Vapor Deposition]]>