Growth Rate of Crystal Surfaces with Several Dislocation Centers

Takeshi Ohtsuka; Yen-Hsi Richard Tsai; Yoshikazu Giga

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Growth Rate of Crystal Surfaces with Several Dislocation Centers

机译：具有几个位错中心的晶体表面的生长速度

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We studied analytically and numerically the growth rate of a crystal surface growing by several screw dislocations. We observed some discrepancy between the growth rates computed by our level set method ( J. Sci. Comput. 2015, 62 , 831?874) and those reported by the classical paper of Burton et al. ( Philos. Trans. R. Soc. London A 1951, 243 , 299?358). To resolve the discrepancy, we propose a few improved estimates on the growth rate in several configurations. In particular, we give a quantitative definition of the critical distance of corotating screw dislocations under which the effective growth resembles that of a single spiral. We further study the growth rate of a crystal surface containing a group of screw dislocations. The proposed new estimates are in agreement with numerical simulations using the algorithm published by the authors ( J. Sci. Comput. 2015, 62 , 831?874).

机译：我们在分析上进行了分析和数值晶体表面的生长速率，其几个螺旋脱位生长。我们观察到我们的水平集方法（J.SCI的增长率之间的一些差异（Philos。Trans。R. Soc。伦敦1951,243,299？358）。为了解决差异，我们提出了几种配置中的增长率提出了一些改进的估计。特别是，我们给出了计算螺杆位错的关键距离的定量定义，在该螺杆脱位的临界距离类似于单一螺旋的临界距离。我们进一步研究了包含一组螺旋脱位的晶体表面的生长速率。建议的新估计与使用作者发布的算法（J.Sci。计算。2015,62,831？874）。

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《Crystal growth & design》 |2018年第3期|共13页
作者
Takeshi Ohtsuka; Yen-Hsi Richard Tsai; Yoshikazu Giga;
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作者单位

Division of Pure and Applied Science Faculty of Science and Technology Gunma University 4-2 Aramaki-machi Maebashi Gunma 371-8510 Japan;

Department of Mathematics Institute for Computational Engineering and Science (ICES) The University of Texas at Austin Austin Texas 78712 United States;

Graduate School of Mathematical Sciences The University of Tokyo Komaba 3-8-1 Meguro-ku Tokyo 153-8914 Japan;

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正文语种 eng
中图分类晶体学;
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1. Growth Rate of Crystal Surfaces with Several Dislocation Centers [J] . Takeshi Ohtsuka, Yen-Hsi Richard Tsai, Yoshikazu Giga Crystal growth & design . 2018,第3期

机译：具有几个位错中心的晶体表面的生长速度
2. Effect of Growth Rate History on Current Crystal Growth:A Second Look at Surface Effects on Crystal Growth Rates [J] . Pareena Pantaraks, Adrian E.Flood Crystal growth & design . 2005,第1期

机译：生长速率历史对当前晶体生长的影响：再看表面对晶体生长速率的影响
3. Strain rate sensitivity of face-centered-cubic nanocrystalline materials based on dislocation deformation [J] . Jianshe Lian, Changdong Gu, Qing Jiang, Journal of Applied Physics . 2006,第7期

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4. Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method [C] . Isaho Kamata, Norihiro Hoshino, Yuichiro Tokuda, Conference on Silicon Carbide and Related Materials . 2014

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5. Measurement of dislocation velocities and mobile dislocation densities as a function of strain and strain rate in cadmium single crystals. [D] . Robson, Mark Todhunter. 2003

机译：镉单晶中位错速度和移动位错密度的测量与应变和应变率的关系。
6. Singular orientations and faceted motion of dislocations in body-centered cubic crystals [O] . Keonwook Kang, Vasily V. Bulatov, Wei Cai 2012

机译：体心立方晶体中位错的奇异取向和分面运动
7. Growth rate of crystal surfaces with several dislocation centers [O] . Ohtsuka, Takeshi, Tsai, Yen-Hsi Richard, Giga, Yoshikazu 2017

机译：具有多个位错中心的晶体表面的生长速率
8. Oriented Crystal Growth on Amorphous Substrates Using Artificial Surface-Relief Gratings. [R] . Smith, H. I., Flanders, D. C. 1977

机译：用人工表面浮雕光栅在非晶衬底上取向晶体生长。

Growth Rate of Crystal Surfaces with Several Dislocation Centers

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