Highly Reactive TiO2 Anatase Single Crystal Domains Grown by Atomic Layer Deposition

Ishchenko Olga M.; Lamblin Guillaume; Arl Didier; Adjeroud Noureddine; Guillot Jerome; Grysan Patrick; Nukala Pavan; Guyon Julien; Fechete Ioana; Garin Francois; Turek Philippe; Lenoble Damien

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Highly Reactive TiO2 Anatase Single Crystal Domains Grown by Atomic Layer Deposition

机译：高反应性TiO2锐钛矿单晶区域由原子层沉积生长

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Anatase TiO2 films with unusual domains-like morphology were obtained by postdeposition annealing of amorphous TiO2 films deposited by atomic layer deposition (ALD). Such particular morphology was observed only for TiO2 films deposited using TiCl4 precursor in a nonconventional ALD regime where the reaction byproducts or nonreacted precursors are incorporated into the film and induce an explosive recrystallization upon annealing. This recrystallization leads to the formation of micrometric single crystal domains. The investigation of domains by electron backscatter diffraction shows the formation of a significant amount of highly reactive anatase crystalline facets such as (111) that contradicts fundamental crystal growth rules. The stabilization of (111) facets in films without additional seed layers has a strong interest for photocatalysis-based applications for environmental remediation or hydrogen production.

机译：通过由原子层沉积（ALD）沉积的非晶TiO2膜的后沉积退换来获得具有异常结构域的锐钛矿TiO 2膜。仅针对使用TiCl4前体的TiO2膜在非转化的ALD制度中沉积的TiO 2膜观察到这种特殊的形态，其中将反应副产物或非反应性前体掺入薄膜中并在退火时诱导爆炸性重结晶。该重结晶导致微米晶域的形成。电子反向散射衍射域的研究表明，形成大量高反应性锐钛矿晶壳，例如（111），其矛盾的基本晶体生长规则。在没有额外的种子层的薄膜中的（111）刻面的稳定性对光催化的环境修复或氢气产生的基于光催化的应用具有强烈兴趣。

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《Crystal growth & design》 |2018年第9期|共8页
作者
Ishchenko Olga M.; Lamblin Guillaume; Arl Didier; Adjeroud Noureddine; Guillot Jerome; Grysan Patrick; Nukala Pavan; Guyon Julien; Fechete Ioana; Garin Francois; Turek Philippe; Lenoble Damien;
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作者单位

Luxembourg Inst Sci &

Technol Mat Res &

Technol MRT Dept 5 Ave Hauts Fourneaux L-4362 Esch Sur Alzette Luxembourg;

Luxembourg Inst Sci &

Technol Mat Res &

Technol MRT Dept 5 Ave Hauts Fourneaux L-4362 Esch Sur Alzette Luxembourg;

Luxembourg Inst Sci &

Technol Mat Res &

Technol MRT Dept 5 Ave Hauts Fourneaux L-4362 Esch Sur Alzette Luxembourg;

Luxembourg Inst Sci &

Technol Mat Res &

Technol MRT Dept 5 Ave Hauts Fourneaux L-4362 Esch Sur Alzette Luxembourg;

Luxembourg Inst Sci &

Technol Mat Res &

Technol MRT Dept 5 Ave Hauts Fourneaux L-4362 Esch Sur Alzette Luxembourg;

Luxembourg Inst Sci &

Technol Mat Res &

Technol MRT Dept 5 Ave Hauts Fourneaux L-4362 Esch Sur Alzette Luxembourg;

Univ Paris Saclay CNRS UMR 8580 Cent Supelec Lab Struct Proprietes &

Modelisat Solides F-92295 Chatenay Malabry France;

Univ Lorraine CNRS UMR 7239 Lab LEM3 7 Rue Felix Savart F-57073 Metz France;

Univ Strasbourg UMR7515 ICPEES 25 Rue Becquerel F-67087 Strasbourg France;

Univ Strasbourg UMR7515 ICPEES 25 Rue Becquerel F-67087 Strasbourg France;

Univ Strasbourg UMR7177 Inst Chim Strasbourg Lab POMAM 4 Rue Blaise Pascal F-67081 Strasbourg France;

Luxembourg Inst Sci &

Technol Mat Res &

Technol MRT Dept 5 Ave Hauts Fourneaux L-4362 Esch Sur Alzette Luxembourg;

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中图分类晶体学;
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专利

1. Highly Reactive TiO2 Anatase Single Crystal Domains Grown by Atomic Layer Deposition [J] . Ishchenko Olga M., Lamblin Guillaume, Arl Didier, Crystal growth & design . 2018,第9期

机译：高反应性TiO2锐钛矿单晶区域由原子层沉积生长
2. Templated Homoepitaxial Growth with Atomic Layer Deposition of Single-Crystal Anatase (101) and Rutile (110) TiO2 [J] . Theodore J. Kraus, Alexander B. Nepomnyashchii, B. A. Parkinson ACS applied materials & interfaces . 2014,第13期

机译：单晶锐钛矿（101）和金红石（110）TiO2原子层沉积的模板化同质外延生长
3. Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC) [J] . Faugier-Tovar Jonathan, Lazar Florica, Marichy Catherine, Condensed Matter . 2017,第1期

机译：晶格失配对可变层不匹配的单晶表面（InP，GaAs，GaN，SiC）上原子层沉积生长的ZnO的原子有序性的影响
4. Large Third-Order Nonlinearities in Atomic Layer Deposition Grown Nitrogen-Enriched TiO2 Nanoscale Films [C] . Robinson Kuis, Theodosia Gougousi, Isaac Basaldua, IEEE Research and Applications of Photonics in Defense Conference . 2020

机译：原子层沉积生长的富氮TiO2纳米薄膜的大三阶非线性
5. Strong metal support interaction of Pt on TiO2 grown by atomic layer deposition and physical vapor deposition for fuel cell applications. [D] . Hansen, Robin Paul. 2016

机译：通过原子层沉积和物理气相沉积在燃料电池应用中生长的Pt在TiO2上的强金属支撑相互作用。
6. Breakthrough to Non-Vacuum Deposition of Single-Crystal Ultra-Thin Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition [O] . Yu-Kuang Liao, Yung-Tsung Liu, Dan-Hua Hsieh, 2017

机译：单晶超薄均质纳米颗粒层的非真空沉积突破：化学浴沉积和原子层沉积的更好替代方法
7. Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC) [O] . Jonathan Faugier-Tovar, Florica Lazar, Catherine Marichy, 2017

机译：用可变混合物（INP，GaAs，GaN，SiC）对单晶表面生长在单晶表面上的ZnO原子排序的影响
8. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures. [R] . Chin, M. L., Amani, M., O'Regan, T. P., 2015

机译：原子层沉积（aLD） - 沉积二氧化钛（TiO2）厚度对Zr40Cu35al15Ni10（ZCaN）/ TiO2 /铟（In）基电阻随机存取存储器（RRam）结构性能的影响。

Highly Reactive TiO2 Anatase Single Crystal Domains Grown by Atomic Layer Deposition

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