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首页> 外文期刊>Crystal growth & design >Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes
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Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes

机译：镓的表面扩散作为甘纳米线选择性面积生长在Alxoy成核条纹中的起源

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摘要

Selective area epitaxial growth of III-V and III-N nanostructures and nanowires was proven efficient for synthesis of scalable and highly ordered electronic and optoelectronic nanomaterials on dissimilar substrates. Here, we present experimental data and a supporting model showing that the heights of GaN nanowires obtained by selective area growth on alpha-AlxOy stripes in SiNx mask are spatially inhomogeneous, with noticeably higher nanowires at the edge of the stripes compared to the middle region. Careful investigation of all stages of the nanowire formation process, including nucleation of GaN islands of different density and size and the nanowire growth itself, allows us to identify surface diffusion of Ga adatoms from the mask into the stripes as the origin of the observed inhomogeneity. The height inhomogeneity strongly depends on the width of the stripe. The model fits very well the whole set of the observed phenomena, including the nucleation time, density, and size of GaN islands and height profiles of GaN nanowires versus the position across the stripe for different stripe widths. On a general note, these findings demonstrate that nucleation and growth kinetics in selective area epitaxy depends on the size of the pattern, which makes it very different from growth on the equivalent planar layers.
机译：可获得III-V和III-N纳米结构和纳米线的选择性区域外延生长，以便在不同的基材上合成可伸缩和高度有序的电子和光电纳米材料的效率有效。这里，我们存在实验数据和支撑模型，表明通过在SINX掩模中的α-Alxoy条纹上的选择性面积生长获得的GaN纳米线的高度在空间上不均匀，与中间区域相比，条纹边缘处具有明显高的纳米线。仔细研究纳米线形成过程的所有阶段，包括甘岛的不同密度和尺寸和纳米线生长本身的成核，允许我们识别Ga吸附组织从掩模中的表面扩散到条纹中作为观察到的不均匀性的起源。高度不均匀性强烈取决于条纹的宽度。该模型非常适合观察到的现象的整组，包括GaN岛和GaN纳米线的高度曲线的成核时间，密度和大小与不同条纹宽度的条纹的位置。在一般来说，这些研究结果表明，选择性区域外延的成核和生长动力学取决于图案的大小，这使得它与等效平面层上的生长非常不同。

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