Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)(2))(4) and Te(Si(CH3)(3))(2) with Ammonia Coinjection

Lee Yoon Kyeung; Park Eui-Sang; Yoo Chanyoung; Kim Woohyun; Jeon Jeong Woo; Ha Manick; Hwang Cheol Seong

首页> 外文期刊>Crystal growth & design >Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)(2))(4) and Te(Si(CH3)(3))(2) with Ammonia Coinjection

【24h】

Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)(2))(4) and Te(Si(CH3)(3))(2) with Ammonia Coinjection

机译：使用Sn（N（CH3）（2））（4）和TE（Si（CH 3）（3））（2）与氨注入的原子层沉积

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

This study introduces the synthesis of conformal crystalline SnTe films through atomic layer deposition (ALD) using the sequential injection of Sn(N(CH3)(2))(4) and Te(Si(CH3)(3))(2) with NH3 coinjection. The one to one stoichiometry of the deposited SnTe films indicates the conversion of Sn(IV) to Sn(II) and the removal of Te(0) during the deposition process as a result of the redox reaction between Sn(IV) and Te2-. NH3 coinjection with Te(Si(CH3)(3))(2) facilitated the uniform growth of SnTe films even at high temperatures (>130 degrees C), where the growth was severely retarded in the absence of NH3 due to the desorption of the precursors from the substrates. The self-limiting growth rates of 93 and 150 ng.cm(-2).cycle(-1) (1.5 and 2.4 A.cycle(-1)) were obtained at 90 and 130 degrees C, respectively. The process produced high-purity, crystalline-as-deposited SnTe films with a face-centered cubic structure.

机译：本研究通过使用顺序注射Sn（N（CH 3）（2））（4）和TE（Si（CH3）（3））（2），介绍了通过原子层沉积（ALD）的共形晶体SNTE膜的合成 NH3投注。沉积的SNET膜的一对一化学计量表明，在SN（IV）和TE2-之间的氧化还原反应的结果，Sn（IV）至Sn（II）的转化为Sn（IV）至Sn（II）和除去Te（0）的除去（IV）和TE2- 。 NH3与TE（Si（CH3）（3））（3））（2）促进SNET膜的均匀生长，即使在高温（> 130℃），在没有NH3的情况下由于解吸而严重延迟了生长来自基材的前体。在90和130℃下，93和150 ng.cm（-2）的自限流率为93和150 ng.cm（-2）。该方法产生高纯度，结晶的晶体状的SNTE薄膜，具有面为中心的立方结构。

著录项

来源
《Crystal growth & design》 |2020年第7期|共8页
作者
Lee Yoon Kyeung; Park Eui-Sang; Yoo Chanyoung; Kim Woohyun; Jeon Jeong Woo; Ha Manick; Hwang Cheol Seong;
展开▼
作者单位

Seoul Natl Univ Dept Mat Sci &

Engn Seoul South Korea;

Seoul Natl Univ Dept Mat Sci &

Engn Seoul South Korea;

Seoul Natl Univ Dept Mat Sci &

Engn Seoul South Korea;

Seoul Natl Univ Dept Mat Sci &

Engn Seoul South Korea;

Seoul Natl Univ Dept Mat Sci &

Engn Seoul South Korea;

Seoul Natl Univ Dept Mat Sci &

Engn Seoul South Korea;

Seoul Natl Univ Dept Mat Sci &

Engn Seoul South Korea;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词

相似文献

外文文献
中文文献
专利

1. Synthesis and Characterization of Quaternary Complexes Ln(CH2＝C(CH3)-COO)2(NO3) (phen)2 [J] . ZHAO Shu-hui, XIAN Chun-ying 东华大学学报（英文版） . 2002,第004期
2. Synthesis of chiral tetrahedral transition metal carbonyl clusters SFeCoM(CO)8(RCOCp)(M=Mo,W;R=H,CH3,C2H5O)and the crystalrnstructure of sfecow9(co)8(c2h5o2ccp) [J] . 中国化学快报（英文版） . 1994,第011期
3. Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)(2))(4) and Te(Si(CH3)(3))(2) with Ammonia Coinjection [J] . Lee Yoon Kyeung, Park Eui-Sang, Yoo Chanyoung, Crystal growth & design . 2020,第7期

机译：使用Sn（N（CH3）（2））（4）和TE（Si（CH 3）（3））（2）与氨注入的原子层沉积
4. Atomic Layer Deposition of GeTe and Ge-Sb-Te Films Using HGeCl3, Sb(OC2H5)(3), and {(CH3)(3)Si}(2)Te and Their Reaction Mechanisms [J] . Gwon Taehong, Eom Taeyong, Yoo Sijung, Chemistry of Materials: A Publication of the American Chemistry Society . 2017,第19期

机译：使用HGECL3，Sb（OC2H5）（3）和{（CH 3）（3）Si}（2）Te及其反应机制，Gete和Ge-Sb-Te膜的原子层沉积及其反应机制
5. Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)(3)Si](2)Se with the discrete feeding method for the ovonic threshold switch [J] . Kim Woohyun, Yoo Sijung, Yoo Chanyoung, Nanotechnology . 2018,第36期

机译：使用HGECL3和[（CH3）（3）Si]（2）SE具有用于卵形阈值开关的离散馈电方法的原子层沉积
6. DEPOSITION SEQUENCES FOR ATOMIC LAYER GROWTH OF AIN THIN FILMS ON Si(100) USING DIMETHYLETHYLAMINE ALANE AND AMMONIA [C] . Symposium on nitride semiconductors . 1998

机译：使用二甲基胺alane和氨对Si（100）上的AIN薄膜原子层生长的沉积序列
7. Surface investigations of the atomic layer growth mechanism in aluminum nitride thin film deposition using dimethylethylamine alane and ammonia. [D] . Kuo, Jason Se-Yung. 1999

机译：使用二甲基乙胺烷和氨气进行氮化铝薄膜沉积时原子层生长机理的表面研究。
8. Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZrN(CH3)23/C7H8 Cocktail Precursor [O] . Jong-Ki An, Nak-Kwan Chung, Jin-Tae Kim, 2018

机译：生长温度对使用CpZr N（CH3）2 3 / C7H8鸡尾酒前体原子层沉积制备的ZrO2薄膜的结构和电性能的影响
9. Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZrN(CH3)23/C7H8 Cocktail Precursor [O] . Jong-Ki An, Nak-Kwan Chung, Jin-Tae Kim, 2018

机译：使用CPZR N（CH3）2 3 / C7H8鸡尾酒前体采用CPZR N（CH3）2 3 / C7H8沉积物制造的ZrO2膜结构和电性能的影响

Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)(2))(4) and Te(Si(CH3)(3))(2) with Ammonia Coinjection

摘要

著录项

相似文献

相关主题

期刊订阅