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Electrochemically Prepared Polycrystalline Copper Surface for the Growth of Hexagonal Boron Nitride

机译：用于六边形氮化硼的生长的电化学制备的多晶铜表面

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摘要

The controlled and reproducible growth of, hexagonal boron nitride (h-BN) by chemical vapor deposition on polycrystalline copper foil substrates remains a challenge as typical growth surfaces contain microscopic ridges (height approximate to 100 mu m) arising from the foil manufacturing process. In this work, we report a method to prepare Commercially cold-rolled polycrystalline copper substrates for greatly improved growth of h-BN by a combination of thermal annealing in a reducing environment and electrochemical polishing to create an excellent surfacethat enables control of BN nucleation sites. We report a root mean square roughness of similar to 1.2 nm for the Cu substrate after electropolishing and a reduction of nucleation sites along with enlargement of h-BN crystals with this combined approach. We also assess the potential role of surface features that exist on the Cu surface as, nucleation sites. The development of an electrochemical process to prepare two-dimensional (2D) material growth substrates and demonstration of greatly improved growth of 2D materials directly point to more pragmatic large scale processing of 2D materials since such techniques are already utilized in large scale industrial Processing.
机译：通过化学气相沉积对多晶铜箔基材进行的六边形氮化硼（H-Bn）的受控和可再生生长仍然是诸如典型的生长表面含有从箔制造工艺产生的微观脊（高度近似至100μm）的挑战。在这项工作中，我们报告了一种制备商业冷轧的多晶铜基材的方法，以通过在还原环境中的热退火和电化学抛光中的热退火组合来大大提高H-Bn的生长，以产生优异的冲浪液能够控制BN成核位点。我们在电抛光电镀后报告了与Cu基质类似的1.2nm的根均方粗糙度，并随着H-BN晶体的放大而具有这种组合方法。我们还评估了Cu表面上存在的表面特征的潜在作用，如核状点。电化学方法的发展制备二维（2D）材料生长底物和显着提高2D材料的生长直接指向2D材料的更加务实的大规模加工，因为这些技术已经用于大规模的工业加工。

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