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首页> 外文期刊>Crystal growth & design >Unraveling the Crystallization Kinetics of Supercooled Liquid GeTe by Ultrafast Calorimetry
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Unraveling the Crystallization Kinetics of Supercooled Liquid GeTe by Ultrafast Calorimetry

机译：Ultrafast量热法解开过冷液体Gete的结晶动力学

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摘要

Crystallization kinetics of phase change materials (PCMs) at high temperatures is of key importance for the extreme speed of data writing and erasing. In this work, the crystallization behavior of one of the typical PCMs, GeTe, has been studied using ultrafast differential scanning calorimetry (DSC) at high heating rates up to 4 x 104 K s(-1). A strong non-Arrhenius temperature-dependent viscosity has been observed. We considered two viscosity models for estimating the crystal growth kinetics coefficient (U-kin). The results showed that the MYEGA model was more suitable to describe the temperature-dependent viscosity and the crystal growth kinetics for supercooled liquid GeTe. The glass transition temperature (T-g) and fragility m were estimated to be 432.1 K and 130.7, respectively. The temperature-dependent crystal growth rates, which were extrapolated by the MYEGA model, were in line with the experimental results that were measured by in situ transmission electron microscopy at a given temperature. The crystal growth rate reached a maximum of 3.5 m s(-1) at 790 K. These results based on ultrafast DSC with the MYEGA model offer a revelation for crystallization kinetics of supercooled liquid GeTe.
机译：高温下相变材料（PCMS）的结晶动力学对数据写作和擦除的极端速度具有重要意态。在这项工作中，使用超快差分扫描量热法（DSC）在高达4×104ks（-1）的高加热速率下研究了典型PCMS Gete的结晶行为。已经观察到强大的非阿列枯瑚温度粘度。我们考虑了用于估计晶体生长动力学系数（U-Kin）的两种粘度模型。结果表明，Myega模型更适合描述过冷液体凝固的温度依赖性粘度和晶体生长动力学。玻璃化转变温度（T-G）和脆性M分别估计为432.1k和130.7。由Myega模型推断的温度依赖性晶体生长速率与通过在给定温度下通过原位透射电子显微镜测量的实验结果。 790 K的晶体生长速率最多达到3.5米S（-1）。这些结果基于Ultafast DSC的Myegas模型提供了过冷液体gete的结晶动力学的启示。

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  • 来源
    《Crystal growth & design》 |2017年第7期|共7页
  • 作者

    Chen Yimin; Wang Guoxiang; Song Lijian; Shen Xiang; Wang Junqiang; Huo Juntao; Wang Rongping; Xu Tiefeng; Dai Shixun; Nie Qiuhua;

  • 作者单位

    Ningbo Inst Mat Technol &

    Engn Chinese Sci Key Lab Magnet Mat &

    Devices Ningbo 315201 Peoples R China;

    Adv Technol Res Inst Lab Infrared Mat &

    Devices Ningbo 315211 Peoples R China;

    Ningbo Inst Mat Technol &

    Engn Chinese Sci Key Lab Magnet Mat &

    Devices Ningbo 315201 Peoples R China;

    Adv Technol Res Inst Lab Infrared Mat &

    Devices Ningbo 315211 Peoples R China;

    Ningbo Inst Mat Technol &

    Engn Chinese Sci Key Lab Magnet Mat &

    Devices Ningbo 315201 Peoples R China;

    Ningbo Inst Mat Technol &

    Engn Chinese Sci Key Lab Magnet Mat &

    Devices Ningbo 315201 Peoples R China;

    Adv Technol Res Inst Lab Infrared Mat &

    Devices Ningbo 315211 Peoples R China;

    Ningbo Inst Mat Technol &

    Engn Chinese Sci Key Lab Magnet Mat &

    Devices Ningbo 315201 Peoples R China;

    Adv Technol Res Inst Lab Infrared Mat &

    Devices Ningbo 315211 Peoples R China;

    Adv Technol Res Inst Lab Infrared Mat &

    Devices Ningbo 315211 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
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