Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Marin Enrique G.; Marian Damiano; Perucchini Marta; Fiori Gianluca; Iannaccone Giuseppe

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Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

机译：基于具有变化厚度和能量滤波源的二维材料叠层的横向异性结构场效应晶体管

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摘要

The bandgap dependence on the number of atomic layers of some families of two-dimensional (2D) materials can be exploited to engineer and use lateral heterostructures (LHs) as high-performance field-effect transistors (FETs). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in the density of states (DOS) of the 2D material that can eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs thanks to an energy-filtering source. We have observed this effect in the case of a PdS2 LH-FET due to the particular DOS of its bilayer configuration. Our results are based on ab initio and multiscale materials and device modeling and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates.

机译：可以利用一些二维（2D）材料的原子层数量的带隙依赖性，并使用横向异性结构（LHS）作为高性能场效应晶体管（FET）。此选项可以提供非常好的格子匹配以及高异类的表面质量。更重要的是，具有层堆叠的这种带隙调制可以产生2D材料的状态（DOS）密度的陡峭转变，这最终可以用于在LH-FET中实现LH-FET的Sub-60 MV /十年Subtheshold摆动 - 反弹来源。由于其双层配置的特定DOS，我们在PDS2 LH-FET的情况下观察到这种效果。我们的结果基于AB Initio和MultiScale材料和设备建模，并挑习了2D材料设计空间的探索，以寻找更突然的DOS过渡和更好的合适候选者。

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《ACS nano》 |2020年第2期|共8页
作者
Marin Enrique G.; Marian Damiano; Perucchini Marta; Fiori Gianluca; Iannaccone Giuseppe;
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作者单位

Univ Pisa Dipartimento Ingn Informaz I-56122 Pisa Italy;

Univ Pisa Dipartimento Ingn Informaz I-56122 Pisa Italy;

Univ Pisa Dipartimento Ingn Informaz I-56122 Pisa Italy;

Univ Pisa Dipartimento Ingn Informaz I-56122 Pisa Italy;

Univ Pisa Dipartimento Ingn Informaz I-56122 Pisa Italy;

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原文格式 PDF
正文语种 eng
中图分类分子物理学、原子物理学;
关键词
lateral heterostructures; two-dimensional materials; energy filtering source; field-effect transistor; sub-60 mV/decade subthreshold swing; multiscale simulations;

机译：横向异性结构;二维材料;能量滤波源;场效应晶体管;SUB-60 MV /十年亚阈值摆动;多尺度模拟;

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专利

1. Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source [J] . Marin Enrique G., Marian Damiano, Perucchini Marta, ACS nano . 2020,第2期

机译：基于具有变化厚度和能量滤波源的二维材料叠层的横向异性结构场效应晶体管
2. Impact of gate length and barrier thickness on performance of InP/InGaAs based Double Gate Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET) [J] . Sudhansu Kumar Pati, Hemant Pardeshi, Godwin Raj, Superlattices and microstructures . 2013,第MARa期

机译：栅极长度和势垒厚度对基于InP / InGaAs的双栅极金属氧化物半导体异质结构场效应晶体管（DG MOS-HFET）性能的影响
3. Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors [J] . Samarendra P. Singh, Zi-En Ooi, Serene Ng Lay Geok, Applied Physics Letters . 2011,第7期

机译：基于氧化锌-有机半导体横向异质结构的混合场效应双极晶体管的电学特性
4. Two-dimensional transistors based on MoS2 lateral heterostructures [C] . D. Marian, E. Dib, T. Cusati, IEEE International Electron Devices Meeting . 2016

机译：基于MoS2横向异质结构的二维晶体管
5. Charge Transport in Field-Effect Transistors based on Layered Materials and their Heterostructures. [D] . Kumar, Jatinder. 2016

机译：基于层状材料及其异质结构的场效应晶体管中的电荷传输。
6. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters [O] . Woo Jong Yu, Zheng Li, Hailong Zhou, -1

机译：垂直堆叠的多层材料的多异质结构为逻辑晶体管和互补的逆变器
7. Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source [O] . Enrique G. Marin, Damiano Marian, Marta Perucchini, 2020

机译：基于具有不同厚度和能量滤波源的二维材料叠层的横向异性结构场效应晶体管

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

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