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首页> 外文期刊>ACS applied materials & interfaces >High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform
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High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform

机译：高通含量SiGe合金单晶使用纳米膜平台

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摘要

The growth of single crystals of Ge-rich SiGe alloys in an extended composition range is demonstrated using the nanomembrane (NM) platform and III-V growth substrates. Thin films of high-Ge-content SiGe films are grown on GaAs(001) to below the kinetic critical thickness and released from the growth substrate by selectively etching a release layer to relax the strain. The resulting crystalline nanomembranes at the natural lattice constant of the alloy are transferred to a new host and epitaxially overgrown at similar compositions to make a thicker single crystal. Straightforward critical-thickness calculations demonstrate that a very wide range of group IV alloys, including those involving Sn, can be fabricated using the NM platform and the proper choice of III-V substrate. Motivations for making new group IV alloys center on band gap engineering for the development of novel group IV optoelectronic structures and devices.
机译：使用纳米膜（NM）平台和III-V生长衬底对延长的组成范围中富含GE富含GE的SiGe合金的单晶的生长。 高Ge含量SiGe膜的薄膜在GaAs（001）上生长至在动力学临界厚度下方并通过选择性地蚀刻释放层以松弛所述菌株来释放。 在合金的天然晶格常数下所得的结晶纳米爆发被转移到新的宿主并外延超薄于类似的组合物中以制备较厚的单晶。 Straightforward critical-thickness calculations demonstrate that a very wide range of group IV alloys, including those involving Sn, can be fabricated using the NM platform and the proper choice of III-V substrate. 新型IV族族合金中心制作新型IV族光电结构和器件的动机。

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