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首页> 外文期刊>ACS applied materials & interfaces >Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization
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Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization

机译：基于RF溅射，电子束辐射和硫化的大规模MOS2，基于大规模MOS2的异常均匀均匀和可伸缩的多层MOS2光电阵列

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摘要

Two-dimensional molybdenum disulfide (MoS2) has emerged as a promising material for optoelectronic applications because of its superior electrical and optical properties. However, the difficulty in synthesizing large-scale MoS2 films has been recognized as a bottleneck in uniform and reproducible device fabrication and performance. Here, we proposed a radio-frequency magnetron sputter system, and post-treatments of electron beam irradiation and sulfurization to obtain large-scale continuous and high-quality multilayer MoS2 films. Large-area uniformity was confirmed by no deviation of electrical performance in fabricated MoS2 thin-film transistors (TFTs) with an average on/off ratio of 10(3) and a transconductance of 0.67 nS. Especially, the photoresponsivity of our MoS2 TFT reached 3.7 A W-1, which is a dramatic improvement over that of a previously reported multilayer MoS2 TFT (0.1 A W-1) because of the photogating effect induced by the formation of trap states in the band gap. Finally, we organized a 4 X 4 MoS2 phototransistor array with high photosensitivity, linearity, and uniformity for light detection, which demonstrates the great potential of 2D MoS2 for future-oriented optoelectronic devices.
机译：二维钼二硫化物（MOS2）由于其优异的电气和光学性能而被出现为光电应用的有希望的材料。然而，合成大规模MOS2薄膜的难度已经被认为是均匀和可再现的设备制造和性能的瓶颈。在这里，我们提出了一种射频磁控溅射系统，以及电子束照射和硫化后处理，以获得大规模的连续和高质量的多层MOS2膜。通过在制造的MOS2薄膜晶体管（TFT）中没有电气性能的偏差证实了大面积均匀性，平均接通/截止比为10（3）和0.67ns的跨导。特别地，我们的MOS2 TFT的光响应性达到3.7AW-1，这是由于通过在捕集状态的形成引起的光引起的效果而对先前报道的多层MOS2 TFT（0.1A W-1）的剧烈改善带隙。最后，我们组织了一个带有高光敏性，线性度和均匀性的4×4 MOS2光电晶体管阵列，用于光检测，这表明了2D MOS2为未来导向的光电器件的巨大电位。

著录项

  • 来源
    《ACS applied materials & interfaces》 |2020年第18期|共8页
  • 作者

    Park Heekyeong; Liu Na; Kim Bong Ho; Kwon Soon Hyeong; Baek Seungho; Kim Sehwan; Lee Han-Koo; Yoon Young Joon; Kim Sunkook;

  • 作者单位

    Sungkyunkwan Univ Sch Adv Mat Sci &

    Engn Suwon 16419 Gyeonggi Do South Korea;

    Sungkyunkwan Univ Sch Adv Mat Sci &

    Engn Suwon 16419 Gyeonggi Do South Korea;

    Korea Inst Ceram Engn &

    Technol Nanomat &

    Nanotechnol Ctr Jinju Si 52851 Gyeongsangnam D South Korea;

    Korea Inst Ceram Engn &

    Technol Nanomat &

    Nanotechnol Ctr Jinju Si 52851 Gyeongsangnam D South Korea;

    Sungkyunkwan Univ Sch Adv Mat Sci &

    Engn Suwon 16419 Gyeonggi Do South Korea;

    Sungkyunkwan Univ Sch Adv Mat Sci &

    Engn Suwon 16419 Gyeonggi Do South Korea;

    Pohang Accelerator Lab Pohang Si 37673 Gyeongsangbuk D South Korea;

    Korea Inst Ceram Engn &

    Technol Nanomat &

    Nanotechnol Ctr Jinju Si 52851 Gyeongsangnam D South Korea;

    Sungkyunkwan Univ Sch Adv Mat Sci &

    Engn Suwon 16419 Gyeonggi Do South Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    MoS2; phototransistor array; sputtering; electron beam irradiation; sulfurization;

    机译：MOS2;光电晶体管阵列;溅射;电子束辐照;硫化;

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