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首页> 外文期刊>ACS applied materials & interfaces >Surface Plasmon Resonance-Enhanced Near-Infrared Absorption in Single-Layer MoS2 with Vertically Aligned Nanoflakes
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Surface Plasmon Resonance-Enhanced Near-Infrared Absorption in Single-Layer MoS2 with Vertically Aligned Nanoflakes

机译：表面等离子体共振 - 在单层MOS2中增强近红外吸收，具有垂直对齐的纳米薄片

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摘要

The development of MoS2 with two- or three-dimensional heterostructures can provide a significant breakthrough for the enhancement of photodetection abilities such as increase in light absorption and expanding the detection ranges. Till date, although the synthesis of a MoS2 layer with three-dimensional nanostructures using a chemical vapor deposition (CVD) process has been successfully demonstrated, most studies have concentrated on electrochemical applications that utilize structural strengths, for example, a large specific surface area and electrochemically active sites. Here, for the first time, we report spectral light absorption induced by plasmon resonances in single-layer MoS2 (SL-MoS2) with vertically aligned nanoflakes grown by a CVD process. Treatment with oxygen plasma results in the formation of a substoichiometric phase of MoOx in the vertical nanoflakes, which exhibit a high electron density of 4.5 x 10(13) cm(-1). The substoichiometric MoOx with a high electron-doping level that is locally present on the SL-MoS2 surface induces an absorption band in the near-infrared (NIR) wavelength range of 1000-1750 nm because of the plasmon resonances. Finally, we demonstrate the enhancement of photodetection ability by broadening the detection range from the visible region to the NIR region in oxygen-treated SL-MoS2 with vertically aligned nanoflakes.
机译：具有两个或三维异质结构的MOS2的开发可以提供显着突破，用于增强光电检测能力，例如光吸收和扩展检测范围。迄今为止，已经成功地证明了使用化学气相沉积（CVD）工艺的三维纳米结构的MOS2层的合成，但大多数研究浓缩了利用结构强度的电化学应用，例如，大的比表面积和电化学活性位点。这里，首次，我们报告通过单层MOS2（SL-MOS2）中的等离子体谐振引起的光谱光吸收，其通过CVD工艺生长垂直对齐的纳米薄片。用氧等离子体治疗导致垂直纳米薄膜中MOOX的倒档相的形成，其具有4.5×10（13 )cm（-1）的高电子密度。具有高电子掺杂水平的替代型MOOX，其局部存在于SL-MOS2表面上，由于等离子体的共振，近红外（NIR）波长范围的吸收带在1000-1750nm的近红外（NIR）波长范围内。最后，我们通过将来自可见区域的检测范围扩大到氧处理的SL-MOS2中的NIR区域的检测范围来证明通过垂直排列的纳米薄片来提高光检测能力。

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