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首页> 外文期刊>ACS applied materials & interfaces >Oxygen Vacancies Enabled Porous SnO2 Thin Films for Highly Sensitive Detection of Triethylamine at Room Temperature
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Oxygen Vacancies Enabled Porous SnO2 Thin Films for Highly Sensitive Detection of Triethylamine at Room Temperature

机译：氧气空位使多孔SnO2薄膜用于高敏感的三乙胺在室温下检测

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摘要

Detection of volatile organic compounds (VOCs) at room temperature (RT) currently remains a challenge for metal oxide semiconductor (MOS) gas sensors. Herein, for the first time, we report on the utilization of porous SnO2 thin films for RT detection of VOCs by defect engineering of oxygen vacancies. The oxygen vacancies in the three-dimensional-ordered SnO2, thin films, prepared by a colloidal template method, can be readily manipulated by thermal annealing at different temperatures. It is found that oxygen vacancies play an important role in the RT sensing performances, which successfully enables the sensor to respond to triethylamine (TEA) with an ultrahigh response, for example, 150.5-10 ppm TEA in a highly selective manner. In addition, the sensor based on oxygen vacancy-rich SnO2 thin films delivers a fast response and recovery speed (53 and 120 s), which can be further shortened to 10 and 36 s by elevating the working temperature to 120 degrees C. Notably, a low detection limit of 110 ppb has been obtained at RT. The overall performances surpass most previous reports on TEA detection at RT. The outstanding sensing properties can be attributed to the porous structure with abundant oxygen vacancies, which can improve the adsorption of molecules. The oxygen vacancy engineering strategy and the on-chip fabrication of porous MOS thin film sensing layers deliver great potential for creating high-performance RT sensors.
机译：在室温（RT）的检测目前对金属氧化物半导体（MOS）气体传感器仍然是挑战。在此，我们首次报告了多孔SnO2薄膜的利用，通过缺氧工程缺陷工程来利用RT检测VOC。通过胶体模板方法制备的三维有序的SnO2，薄膜中的氧空位可以通过在不同温度下的热退火容易地操纵。结果发现氧空位在RT感测性能中起重要作用，其成功使得传感器能够以高精度的方式用超高响应响应三乙胺（茶），例如150.5-10ppm茶。另外，基于富氧空位的SnO2薄膜的传感器提供快速响应和恢复速度（53和120秒），其可以通过将工作温度升高至120℃，进一步缩短到10和36s。在室温下获得了110ppb的低检测限。整体表演超越了RT的最先前关于茶检测的报告。优异的感测性能可归因于具有丰富氧空位的多孔结构，可以改善分子的吸附。氧气空位工程策略和多孔MOS薄膜传感层的片上制造能够产生高性能RT传感器的巨大潜力。

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