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首页> 外文期刊>ACS applied materials & interfaces >Symmetry-Controlled Reversible Photovoltaic Current Flow in Ultrathin All 2D Vertically Stacked Graphene/MoS2/WS2/Graphene Devices
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Symmetry-Controlled Reversible Photovoltaic Current Flow in Ultrathin All 2D Vertically Stacked Graphene/MoS2/WS2/Graphene Devices

机译：对称控制的可逆光伏电流在超薄所有2D垂直堆叠石墨烯/ MOS2 / WS2 /石墨烯装置中

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Atomically thin vertical heterostructures are promising candidates for optoelectronic applications, especially for flexible and transparent technologies. Here, we show how ultrathin all two-dimensional vertical-stacked type-II heterostructure devices can be assembled using only materials grown by chemical vapor deposition, with graphene (Gr) as top and bottom electrodes and MoS2/WS2 as the active semiconductor layers in the middle. Furthermore, we show that the stack symmetry, which dictates the type-II directionality, is the dominant factor in controlling the photocurrent direction upon light irradiation, whereas in homobilayers, photocurrent direction cannot be easily controlled because the tunnel barrier is determined by the doping levels of the graphene, which appears fixed for top and bottom graphene layers due to their dielectric environments. Therefore, the ability to direct photovoltaic current flow is demonstrated to be only possible using heterobilayers (HBs) and not homobilayers. We study the photovoltaic effects in more than 40 devices, which allows for statistical verification of performance and comparative behavior. The photovoltage in the graphene/transition-metal dichalcogenide-heterobilayer/graphene (Gr/TMD-HB (MoS2/WS2)/Gr) increases up to 10 times that generated in the monolayer TMD devices under the same optical illumination power, due to efficient charge transfer between WS2 and MoS2 and extraction to graphene electrodes. By applying external gate voltages (V-g), the band alignment can be tuned, which in turn controls the photovoltaic effect in the vertical heterostructures. The tunneling-assisted interlayer charge recombination also plays a significant role in modulating the photovoltaic effect in the Gr/TMD-HB/Gr. These results provide important insights into how layer symmetry in vertical stacked graphene/TMD/graphene ultrathin optoelectronics can be used to control electron flow directions during photoexcitation and open up opportunities for tandem cell assembly.
机译：原子上薄的垂直异质结构是光电应用的承诺候选者，尤其是灵活且透明的技术。在这里，我们展示了如何仅使用化学气相沉积的材料来组装所有二维垂直堆叠型II异质结构装置，如图所示，石墨烯（GR）作为顶部和底部电极和MOS2 / WS2，作为主体半导体层中间。此外，我们表明，决定II型方向性的堆叠对称性是在光照射时控制光电流方向的主导因素，而在同型旋转中，不能容易地控制光电流方向，因为隧道屏障由掺杂水平确定图的石墨烯由于它们的介电环境而出现顶部和底部石墨烯层。因此，对光伏电流的能力进行说明仅使用异质层（HBS）而不是同型均无均单独的。我们研究了40多种设备中的光伏效果，这允许统计验证性能和比较行为。石墨烯/过渡 - 金属二甲基甲胺 - 异质层/石墨烯（GR / TMD-HB（MOS2 / WS2）/ GR）在单层TMD装置中产生的高达10倍，其在相同的光学照明功率下产生的高达10倍，这是有效的WS2和MOS2之间的电荷传递并提取到石墨烯电极。通过施加外部栅极电压（V-G），可以调谐带对准，这反过来控制垂直异质结构中的光伏效果。隧道辅助层间电荷重组也在调节GR / TMD-HB / GR中的光伏效应方面发挥着重要作用。这些结果提供了垂直堆叠石墨烯/ TMD /石墨烯超薄光电子中的层对称性的重要见解，可用于控制光透镜期间的电子流动方向，并打开串联电池组件的机会。

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