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首页> 外文期刊>ACS applied materials & interfaces >Light Trapping in Conformal Graphene/Silicon Nanoholes for High-Performance Photodetectors
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Light Trapping in Conformal Graphene/Silicon Nanoholes for High-Performance Photodetectors

机译：用于高性能光电探测器的共形石墨烯/硅纳米孔的光捕获

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摘要

Hybrid graphene/silicon heterojunctions have been widely utilized in photodetectors because of their unique characteristics of high sensitivity, fast response, and CMOS compatibility. However, the photoresponse is restricted by the high reflectance of planar silicon (up to 50%). Herein, an improved graphene/Si detector with excellent light absorption performance is proposed and demonstrated by directly growing graphene on the surface of silicon nanoholes (SiNHs). It is shown that the combination of SiNHs with conformal graphene provides superior interfaces for efficient light trapping and transport of the photoexcited carriers. A high absorption of up to 90% was achieved, and the conformal graphene/SiNH-based photodetectors exhibited a higher photoresponsivity (2720 A/W) and faster response (similar to 6.2 mu s), compared with the counterpart of the planar graphene/Si, for which the corresponding values are 850 A/W and 51.3 mu s. These results showcase the vital role of the material morphology in optoelectronic conversion and pave the way to explore novel high-performance heterojunction photodetectors.
机译：杂交石墨烯/硅杂交型已广泛用于光电探测器，因为它们具有高灵敏度，快速响应和CMOS兼容性的独特特征。然而，光孔受平坦硅的高反射率（高达50％）的限制。在此，提出了一种具有优异光吸收性能的改进的石墨烯/ Si检测器，并通过直接在硅纳米孔（SINHS）表面上生长石墨烯来说明。结果表明，具有共形石墨烯的SINH的组合提供了用于高效的光透射载体的高效捕获和运输的卓越界面。达到高达90％的高吸收，与平面石墨烯的对应物相比，较高的光导体/ SINH基光电探测器表现出更高的光响应性（2720 A / W）和更快的响应（类似于6.2μs）。 Si，相应的值为850 A / W和51.3亩。这些结果展示了材料形态在光电转换中的重要作用，并铺平了探索新型高性能异质结光电探测器的方法。

著录项

  • 来源
    《ACS applied materials & interfaces》 |2019年第33期|共9页
  • 作者

    Yang Jun; Tang Linlong; Luo Wei; Shen Jun; Zhou Dahua; Feng Shuanglong; Wei Xingzhan; Shi Haofei;

  • 作者单位

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing Key Lab Multiscale Mfg Technol Chongqing 400714 Peoples R China;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing Key Lab Multiscale Mfg Technol Chongqing 400714 Peoples R China;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing Key Lab Multiscale Mfg Technol Chongqing 400714 Peoples R China;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing Key Lab Multiscale Mfg Technol Chongqing 400714 Peoples R China;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing Key Lab Multiscale Mfg Technol Chongqing 400714 Peoples R China;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing Key Lab Multiscale Mfg Technol Chongqing 400714 Peoples R China;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing Key Lab Multiscale Mfg Technol Chongqing 400714 Peoples R China;

    Chinese Acad Sci Chongqing Inst Green &

    Intelligent Technol Chongqing Key Lab Multiscale Mfg Technol Chongqing 400714 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    graphene; photodetector; light trapping silicon nanostructures; conformal;

    机译：石墨烯;光电探测器;光捕获硅纳米结构;共形;

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