In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min

Li Shenghao; Pomaska Manuel; Hoss Jan; Lossen Jan; Ziegner Mirko; Hong Ruijiang; Finger Friedhelm; Rau Uwe; Ding Kaining

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In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min

机译：在原位掺杂的硅薄膜通过热线化学气相沉积钝化触点，具有42nm / min的高沉积速率

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摘要

Hot-wire chemical vapor deposition was used to deposit in situ-doped amorphous silicon layers for poly-Si/ SiOx passivating contacts at a high deposition rate of 42 nm/ min. We investigated the influence of a varied phosphine gas (PH3) concentration during deposition on (i) the silicon film properties and (ii) the passivating contact performances. The microstructural film properties were characterized before and after a high-temperature crystallization step to transform amorphous silicon films into polycrystalline silicon films. Before crystallization, the silicon layers become less dense as the PH3 concentrations increase. After crystallization, an increasing domain size is derived for higher PH3 concentrations. Sheet resistance is found to decrease as domain size increased, and the correlation between mobility and domain size was discussed. The performances of the passivating contact were measured, and a firing stable open circuit voltage of 732 mV, a contact resistivity of 8.1 m Omega.cm(2), and a sheet resistance of 142 Omega/square could be achieved with the optimized PH3 concentration. In addition, phosphorous doping tails into the crystalline silicon were extracted to evaluate the Auger recombination of the passivating contact.

机译：使用热线化学气相沉积以以42nm / min的高沉积速率沉积在原位掺杂的非晶硅层中，用于聚-Si / SiOx钝化触点。我们研究了在沉积期间（i）硅膜特性和（ii）钝化接触性能期间的不同磷气（pH3）浓度的影响。在高温结晶步骤之前和之后的微观结构膜特性以将非晶硅膜转化为多晶硅膜。在结晶之前，随着PH3浓度的增加，硅层变得较少。结晶后，衍生出增加的pH3浓度的域尺寸。发现薄层电阻降低随域尺寸增加，并且讨论了迁移率和域大小之间的相关性。测量钝化触点的性能，并通过优化的pH3浓度来实现8.1MΩcm（2）的接触电阻率的燃烧稳定的开路电压，达到8.1MΩ·厘米（2）的接触电阻率和142ω/平方的薄层电阻。此外，提取磷掺杂尾部进入晶体硅中，以评估钝化接触的螺旋螺旋形。

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来源
《ACS applied materials & interfaces》 |2019年第33期|共7页
作者
Li Shenghao; Pomaska Manuel; Hoss Jan; Lossen Jan; Ziegner Mirko; Hong Ruijiang; Finger Friedhelm; Rau Uwe; Ding Kaining;
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作者单位

Sun Yat Sen Univ Sch Phys Guangdong Prov Key Lab Photovolta Technol Inst Solar Energy Syst Guangzhou 510006 Guangdong Peoples R China;

Forschungszentrum Julich IEK Photovolta 5 D-52425 Julich Germany;

Int Solar Energy Res Ctr ISC Konstanz D-78467 Constance Germany;

Int Solar Energy Res Ctr ISC Konstanz D-78467 Constance Germany;

Forschungszentrum Julich IEK Microstruct &

Properties Mat 2 D-52425 Julich Germany;

Sun Yat Sen Univ Sch Phys Guangdong Prov Key Lab Photovolta Technol Inst Solar Energy Syst Guangzhou 510006 Guangdong Peoples R China;

Forschungszentrum Julich IEK Photovolta 5 D-52425 Julich Germany;

Forschungszentrum Julich IEK Photovolta 5 D-52425 Julich Germany;

Forschungszentrum Julich IEK Photovolta 5 D-52425 Julich Germany;

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原文格式 PDF
正文语种 eng
中图分类化学工业;
关键词
microstructure factor; domain size; silicon thin film; crystallization; selective contact; silicon surface passivation; phosphorus doping profile; Auger recombination;

机译：微观结构因子;域尺寸;硅薄膜;结晶;选择性接触;硅表面钝化;磷掺杂型材;螺旋钻重组;

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1. In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min [J] . Li Shenghao, Pomaska Manuel, Hoss Jan, ACS applied materials & interfaces . 2019,第33期

机译：在原位掺杂的硅薄膜通过热线化学气相沉积钝化触点，具有42nm / min的高沉积速率
2. Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition [J] . Daimaru T, Tabata A, Mizutani T Thin Solid Films . 2006,第1a2期

机译：通过热线化学气相沉积在各种气压和气体流速下制备的非晶和微晶硅薄膜的结构
3. Low substrate temperature deposition of amorphous and microcrystalline silicon films on plastic substrates by hot-wire chemical vapor deposition [J] . Alpuim P., Conde JP., Chu V. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2000,第Pta1期

机译：通过热线化学气相沉积在塑料基板上低温度沉积非晶和微晶硅膜
4. Optimization of Deposition Parameters for Thin Silicon Films on Flexible Substrates in a Hot-Wire Chemical Vapor Deposition Reactor [C] . P. Alpuim, M. Ribeiro, S. Filonovich International Materials Symposium and Encontro da Sociedade Portuguesa de Materiais . 2006

机译：热线化学气相沉积反应器中柔性基板上薄硅膜沉积参数的优化
5. Low temperature thin film silicon solar cells prepared by hot-wire chemical vapor deposition [D] . Adachi, Michael M. 2007

机译：通过热线化学气相沉积制备的低温薄膜硅太阳能电池
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor [O] . Alpuim P., Ribeiro M., Filonovich Sergej 2006

机译：热线化学气相沉积反应器中柔性基板上的硅薄膜沉积参数的优化
8. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition [R] . Moutinho, H. R., Jiang, C. S., Nelson, B., 2003

机译：衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响

In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min

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