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首页> 外文期刊>ACS applied materials & interfaces >Optimal Blending of PbSe and CdSe in Polycrystalline PbCdSe Nanocomposite Film: Improved Carrier Multiplication and Enhanced Photoconversion Efficiency
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Optimal Blending of PbSe and CdSe in Polycrystalline PbCdSe Nanocomposite Film: Improved Carrier Multiplication and Enhanced Photoconversion Efficiency

机译：多晶PBCDSE纳米复合膜中PBSE和CDSE的最佳混合：提高载体倍增和增强的光电转换效率

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摘要

The present work reports galvanostatic electro-co-deposition of n -PbCdSe semiconductor (SC) films on FTO substrate from the respective precursors. Self-designed matrices were formulated at variable concentrations of Pb~(2+) in the deposition medium. The semiconductor films constitute an intermixed structure of close-packed PbSe and CdSe nanoparticles (NPs), and the band gap (E _(g)) was effectively tuned in the range 0.99–1.47 eV for the variable compositions. Energy dispersive spectroscopy studies revealed that Cd exists in low level in the film matrix compared to Pb, presumably due to competitive deposition kinetics of the two chalcogenide compounds and the crystallite sizes determined from XRD studies, ranges between 15 and 12 nm, which corresponds to the size quenching of SC-NPs with increased Pb~(2+) concentration. The durability studies identify the most stable film developed at 0.025 M Pb~(2+) concentration. PbSe materials are typically characterized with impact ionization which effectively induces carrier multiplication (CM) in the quasi Type-II PbCdSe composite, exhibiting reasonably high photoconversion efficiency (PCE) of 6.14% with current output of 19.2 mA cm~(–2) for the optimal PbCdSe film.
机译：目前的工作报告了来自相应前体的FTO基板上的 n -pbcdse半导体（Sc）膜的镀锌电耦合。在沉积介质中以可变浓度的Pb〜（2+）配制自行设计基质。半导体膜构成紧密填充的PBSE和CDSE纳米颗粒（NPS）的混合结构，并且带隙（ _（g））在0.99-1.47eV的可变组合物的范围内有效调节。能量分散光谱研究表明，与Pb相比，薄膜基质中的低水平存在于薄膜基质中的CD，可能是由于两种硫属化物化合物的竞争性沉积动力学和从XRD研究中确定的微晶尺寸，范围为15至12nm，这对应于SC-NP的大小猝灭，具有增加的PB〜（2+）浓度。耐久性研究识别最稳定的薄膜，以0.025 m pb〜（2+）浓度。 PBSE材料的特征在于碰撞电离，其有效地诱导载体倍增（CM）在准型PBCDSE复合材料中，其具有19.2 mA cm〜（-2）的电流输出的相当高的光电转换效率（PCE）为6.14％最佳的PBCDSE电影。

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