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首页> 外文期刊>ACS applied materials & interfaces >Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio
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Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

机译：具有超高反转率的栅极可调WSE2 / SNSE2向后二极管

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摘要

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe2/SnSe2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of similar to 2.1 x 10(4), and the Same is Maintained up to an unusually large-bias of 1.5 V-outperforming existing backward diode reports using Conventional bulk semiconductors as well as one- and two-dimensional materials by More than an order of magnitude while maintaining an impressive curvature coefficient (gamma) of similar to 37 V-1. The-transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.
机译：向后二极管在反向偏压中比在前向偏压中更有效地进行，提供优异的高频响应，温度稳定性，辐射硬度和比向前方向导通的传统二极管的噪声性能。在这里，我们通过利用WSE2 / SNSE2垂直异质结的巨型交错带偏移来展示VAN DER WALS材料的向后二极管。二极管表现出类似于2.1×10（4）的超高反转比率（R），并且通过传统散装半导体以及使用传统的散装半导体以及使用传统的块状二极管报告的异常大偏置的超强偏差。单位和二维材料超过一个数量级，同时保持与37V-1类似的令人印象深刻的曲率系数（γ）。二极管中的传送机构被示出为通过外部栅极和漏极偏压有效地调谐，以及通过WSE2层的厚度和所用的金属触点的厚度。这些结果为使用二维材料及其异质功能提供了实用电子电路应用的方法。

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