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首页> 外文期刊>ACS applied materials & interfaces >Monolayered Silicon and Germanium Monopnictide Semiconductors: Excellent Stability, High Absorbance, and Strain Engineering of Electronic Properties
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Monolayered Silicon and Germanium Monopnictide Semiconductors: Excellent Stability, High Absorbance, and Strain Engineering of Electronic Properties

机译：单层硅和锗单一内饰半导体：优异的稳定性，高吸光度和电子性能应变工程

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摘要

The discovery of stable two-dimensional (2D) semiconductors with exotic electronic properties is crucial to the future electronic technologies. Using the first-principles calculations, we predict the monolayered Silicon- and Germanium-monopnictides as a new class of semiconductors owning excellent dynamical and thermal stabilities, prominent anisotropy, and high possibility of experimental exfoliation. These semiconductors, including the monolayered SiP, SiAs, GeP, and GeAs, possess wide bandgaps of 2.08-2.64 eV obtained by hybrid functional calculation. Under small uniaxial strains (-2 to 3%), dramatic modulations of their band structures are observed, and furthermore, all the 2D monolayers (MLs) can be transformed between indirect and direct semiconductors. The monolayered GeAs and SiP exhibits extraordinary optical absorption in the range of visible and ultraviolet (UV) light spectra, respectively. The exfoliation energies of these monolayers are comparable to graphene, implying a strong probability of successful fabrication by mechanical exfoliation. These intriguing properties of the monolayered silicon- and germanium-monopnictides, combined with their highly stable structures, offer tremendous opportunities for electronic and optoelectronic devices working under UV-visible spectrum.
机译：具有异国情调电子特性的稳定二维（2D）半导体的发现对于未来的电子技术至关重要。使用第一原理计算，我们预测单层硅和锗 - 单床，作为具有出色的动态和热稳定性，突出的各向异性和实验剥离的高可能性的新型半导体。这些半导体包括单层SIP，SIAS，GEP和GEE，具有杂种功能计算获得的2.08-2.64eV的宽带隙。在小单轴菌株（-2至3％）下，观察到其带结构的戏剧性调制，此外，所有2D单层（MLS）都可以在间接和直接半导体之间转化。单层GEES和SIP分别在可见和紫外（UV）光谱范围内具有非凡的光学吸收。这些单层的剥离能量与石墨烯相当，暗示通过机械剥离成功制造的强烈概率。单层硅和锗 - 单一的这些有趣性质与其高度稳定的结构相结合，为在UV可见光谱下工作的电子和光电器件提供了巨大的机会。

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