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首页> 外文期刊>ACS applied materials & interfaces >Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions
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Nondestructive Readout Complementary Resistive Switches Based on Ferroelectric Tunnel Junctions

机译:基于铁电隧道结的无损读数互补电阻开关

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摘要

Recently, complementary resistive switches (CRSs) have attracted considerable attention because of the effective suppression of the sneak leakage that is an inherent problem of crossbar memory arrays. In this work, we propose a new CRS device enabling nondestructive readout based on back-to-back in-series Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). The FTJ elements exhibit not only a nonvolatile resistance switching but also a typical diode-like transport in the high-resistance state (HRS) because of the ferroelectric enhancement on the Schottky barrier of the BaTiO3/Nb:SrTiO3 interface. With the rectifying characteristic, the complementary HRS + LRS (low-resistance state) and LRS + HRS states can be well-distinguished and nondestructively read out by a subthreshold voltage. In addition, the sneak current is significantly suppressed in the Pt/BaTiO3/Nb:SrTiO3 CRS crossbar array, and the maximum scaling size is increased by about 50 times, in comparison to the array constituted by only the single-FTJ devices. These results facilitate the design of high-performance resistive memories based on the crossbar architecture.
机译:最近,互补电阻开关(CRS)由于有效抑制潜行泄漏是横杆存储器阵列的固有问题而引起了相当大的关注。在这项工作中,我们提出了一种新的CRS设备,可基于串联的背靠背读出无损读数的NONDESTIOPORIO3 / NB:SRTIO3铁电隧道连接(FTJ)。由于BATIO3 / NB:SRTIO3接口的肖特基屏障的铁电增强,FTJ元件不仅表现出非易失性电阻切换,而且还表现出典型的二极管状传输(HRS),因为BATIO3 / NB:SRTIO3接口的肖特基屏障。利用整流特性,互补的HRS + LRS(低电阻状态)和LRS + HRS状态可以通过亚阈值电压良好地分辨和非破坏性地读出。另外,在Pt / Batio3 / Nb:SRTIO3 CRS横杆阵列中,潜水电流显着抑制,并且与仅由单个FTJ器件构成的阵列相比,最大缩放尺寸增加约50倍。这些结果有助于根据横杆架构设计高性能电阻存储器。

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