...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>ACS applied materials & interfaces >Continuous Tuning of Phase Transition Temperature in VO2 Thin Films on c-Cut Sapphire Substrates via Strain Variation
【24h】

Continuous Tuning of Phase Transition Temperature in VO2 Thin Films on c-Cut Sapphire Substrates via Strain Variation

机译：通过应变变化在C-Cut蓝宝石基材上的VO2薄膜中相变温度的连续调谐

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Vanadium dioxide (VO2) thin films with controlled thicknesses are deposited on c-cut sapphire substrates with Al-doped ZnO (AZO) buffer layers by pulsed laser deposition. The surface roughness of AZO buffer layers is varied by controlling oxygen pressure during growth. The strain in the VO2 lattice is found to be dependent on the VO2 thickness and the VO2/AZO interface roughness. The semiconductor-to-metal transition (SMT) properties of VO2 thin films are characterized and the transition temperature (T-c) is successfully tuned by the VO2 thickness as well as the VO2/AZO interface roughness. It shows that the T-c of VO2 decreases with the decrease of film thickness or VO2/AZO interface roughness. Other SMT properties of the VO2 films are maintained during the T-c tuning. The results suggest that the strain tuning induced by AZO buffer provides an effective approach for tuning T-c of VO2 continuously.
机译：通过脉冲激光沉积沉积具有受控厚度的二氧化钒（VO2）具有受控厚度的薄膜，用Al掺杂的ZnO（AZO）缓冲层沉积。 通过在生长期间控制氧气压力来改变偶氮缓冲层的表面粗糙度。 发现VO2晶格中的应变取决于VO2厚度和VO2 / AZO界面粗糙度。 VO2薄膜的半导体到金属转变（SMT）特征在于，并且通过VO2厚度以及VO2 / AZO界面粗糙度成功调谐过渡温度（T-C）。 它表明，VO2的T-C随着薄膜厚度或VO2 / AZO界面粗糙度的降低而降低。 在T-C调谐期间维持VO2薄膜的其他SMT特性。 结果表明，AZO缓冲液引起的应变调谐提供了连续调谐VO2的T-C的有效方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号