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首页> 外文期刊>ACS applied materials & interfaces >Controlled Doping in Graphene Monolayers by Trapping Organic Molecules at the Graphene-Substrate Interface
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Controlled Doping in Graphene Monolayers by Trapping Organic Molecules at the Graphene-Substrate Interface

机译：通过在石墨烯界面处捕获有机分子来控制掺杂石墨烯单层

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摘要

We report controlled doping in graphene monolayers through charge-transfer interaction by trapping selected organic molecules between graphene and underneath substrates. Controllability has been demonstrated in terms of shifts in Raman peaks and Dirac points in graphene monolayers. Under field effect transistor geometry, a shift in the Dirac point to the negative (positive) gate voltage region gives an inherent signature of n- (p-)type doping as a consequence of charge-transfer interaction between organic molecules and graphene. The proximity of organic molecules near the graphene surface as a result of trapping is evidenced by Raman and infrared spectroscopies. Density functional theory calculations corroborate the experimental results and also indicate charge-transfer interaction between certain organic molecules and graphene sheets resulting p- (n-)type doping and reveals the donor and acceptor nature of molecules. Interaction between molecules and graphene has been discussed in terms of calculated Mulliken charge-transfer and binding energy as a function of optimized distance.
机译：我们通过捕获石墨烯和衬底下面的选择的有机分子来报告石墨烯单层中的控制掺杂。在石墨烯单层中的拉曼峰和DIAC点的变化方面已经证明了可控性。在场效应晶体管几何形状下，作为有机分子和石墨烯之间的电荷转移相互作用，DiRAC点的偏移给负（正）栅极电压区域具有N-（P-）型掺杂的固有特征。由于捕获而在石墨烯表面附近的有机分子的接近通过拉曼和红外光谱来证明。密度函数理论计算证实了实验结果，并且还表明某些有机分子和石墨烯片之间的电荷转移相互作用，从而产生p-（n-）型掺杂，并揭示分子的供体和受体性质。在计算的Mulliken电荷转移和结合能方中，已经讨论了分子和石墨烯之间的相互作用作为优化距离的函数。

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