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首页> 外文期刊>ACS applied materials & interfaces >One-Pot Synthesis of Nickel-Modified Carbon Nitride Layers Toward Efficient Photoelectrochemical Cells
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One-Pot Synthesis of Nickel-Modified Carbon Nitride Layers Toward Efficient Photoelectrochemical Cells

机译：镍改性碳氮层朝向有效光电化学细胞的单壶合成

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摘要

A new method to significantly enhance the photoelectrochemical properties of phenyl-modified carbon nitride layers via the insertion of nickel ions into carbon nitride layers is reported. The nickel ions: are embedded within the carbon nitride layers by manipulating the interaction of Ni ions and molten organic molecules at elevated temperature prior to their condensation. A detailed analysis of the chemical and photophysical properties suggests that the nickel ions dissolve in the molten molecules, leading to the homogeneous distribution of nickel atoms within the carbon nitride layers. We found that the nickel atoms can alter the growth mechanism of carbon nitride layers, resulting in extended light absorption, charge transfer properties, and the total photoelectrochemical performance. For the most photoactive electrode, the Ni ions have an oxidation state of 2.8, as confirmed by soft X-ray absorption spectroscopy. Furthermore, important parameters such as absorption coefficient, exciton lifetime, and diffusion length were studied in depth, providing substantial progress in our understanding of the photoelectrochemical properties of carbon nitride films. This work opens new opportunities for the growth of carbon nitride layers and similar materials on different surfaces and provides important progress in our understanding of the photophysical and photoelectrochemical properties of carbon nitride layers toward their implantation in photoelectronic and other devices.
机译：据报道了一种新方法，以通过将镍离子插入氮化物层中的显着增强苯基改性碳氮化物层的光电化学性质。镍离子：通过在缩合之前操纵Ni离子和熔融有机分子的相互作用来嵌入碳氮层内。对化学和光物理性质的详细分析表明镍离子溶解在熔融分子中，导致碳氮层内镍原子的均匀分布。我们发现镍原子可以改变碳氮层的生长机制，导致延长光吸收，电荷转移性和总光电化学性能。对于最多的光活性电极，Ni离子具有2.8的氧化状态，通过软X射线吸收光谱证实。此外，深入研究了诸如吸收系数，激子寿命和扩散长度的重要参数，在我们对碳氮化物膜的光电化学性质的理解中提供了实质性的进展。这项工作开辟了在不同表面上的氮化物层和类似材料的生长的新机会，并在我们理解氮化物层对其光电子和其他装置中的植入中的光物理和光电化学性质的理解提供了重要进展。

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