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首页> 外文期刊>ACS applied materials & interfaces >Controlling Crystallization of All-Inorganic Perovskite Films for Ultralow-Threshold Amplification Spontaneous Emission
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Controlling Crystallization of All-Inorganic Perovskite Films for Ultralow-Threshold Amplification Spontaneous Emission

机译：控制全无机钙钛矿薄膜的结晶，用于超级阈值扩增自发发射

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摘要

All-inorganic lead halide perovskites have gained considerable interest owing to their potential applications in an array of high-performance optoelectronic devices. However, producing highly luminescent, nearly-pinhole-free, all-inorganic perovskite films through a simple solution process remains challenging. Here, we provide a detailed investigation of the crystallization control of inorganic perovskite films fabricated by a one-step spin-coating process. Our results reveal that the coating temperature in the fabrication process is of paramount importance in influencing perovskite crystallization and that lowering the coating temperature and fine stoichiometry modification of the precursors favor the suppression of trap states in CsPbBr3 perovskite films. A broad range of experimental characterizations help us identify that nonsynergistic assembly of solutes, resulting from poor diffusion capability of inorganic salts, is the dominant cause for the inhomogeneous element distribution, low luminescence yield, and poor surface coverage of the resulting films. Importantly, we find that polyethylene glycol can also be used for tailoring the crystallization process, which enables the attainment of high-quality CsPbBr3 films with a maximum luminescence yield of similar to 30%. Finally, we demonstrate that amplification spontaneous emission with an ultralow threshold can be readily accomplished by using the developed film as an emissive component. Our findings provide deep insights into the crystallization control of CsPbBr3 perovskite films and establish a systematic route to high-quality all-inorganic perovskite films, paving the way for widespread optoelectronic applications.
机译：由于其高性能光电器件阵列中的潜在应用，所有无机铅卤化物钙耐益率已经取得了相当大的兴趣。然而，通过简单的解决方案过程生产高发光，几乎无机，无机钙钛矿薄膜仍然具有挑战性。这里，我们提供了通过一步旋涂工艺制造的无机钙钛矿薄膜结晶控制的详细研究。我们的结果表明，在影响钙钛矿结晶方面，制造工艺中的涂层温度具有至关重要的重要性，并且降低前体的涂层温度和细化学计量改性有利于CSPBBR3钙钛矿膜中的陷阱状态抑制。广泛的实验表征有助于我们确定溶质的非粘性组装，由无机盐的扩散能力差，是非均匀元素分布，低发光产量和所得薄膜表面覆盖率差的显性原因。重要的是，我们发现聚乙二醇也可用于定制结晶过程，这使得能够获得高质量的CSPBBR3薄膜，其最大发光产率类似于30％。最后，我们证明通过使用所开发的膜作为发光组分，可以容易地完成具有超级阈值的放大自发发射。我们的调查结果为CSPBBR3钙钛矿薄膜的结晶控制提供了深入的见解，并建立了高质量的全无机钙钛矿薄膜的系统途径，为广泛的光电应用铺平了道路。

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  • 来源
    《ACS applied materials & interfaces》 |2017年第38期|共10页
  • 作者

    Yong Zi-Jun; Zhou Yang; Ma Ju-Ping; Chen Ya-Meng; Yang Jun-Yi; Song Ying-Lin; Wang Jing; Sun Hong-Tao;

  • 作者单位

    Soochow Univ Coll Chem Chem Engn &

    Mat Sci State &

    Local Joint Engn Lab Novel Funct Polymer Suzhou 215123 Peoples R China;

    Soochow Univ Coll Chem Chem Engn &

    Mat Sci State &

    Local Joint Engn Lab Novel Funct Polymer Suzhou 215123 Peoples R China;

    Soochow Univ Coll Chem Chem Engn &

    Mat Sci State &

    Local Joint Engn Lab Novel Funct Polymer Suzhou 215123 Peoples R China;

    Soochow Univ Coll Chem Chem Engn &

    Mat Sci State &

    Local Joint Engn Lab Novel Funct Polymer Suzhou 215123 Peoples R China;

    Soochow Univ Coll Phys Optoelect &

    Energy Suzhou 215123 Peoples R China;

    Soochow Univ Coll Phys Optoelect &

    Energy Suzhou 215123 Peoples R China;

    Sun Yat Sen Univ Sch Chem &

    Chem Engn State Key Lab Optoelect Mat &

    Technol Minist Educ Key Lab Bioinorgan &

    Synthet Chem Guangzhou 510275 Guangdong Peoples R China;

    Soochow Univ Coll Chem Chem Engn &

    Mat Sci State &

    Local Joint Engn Lab Novel Funct Polymer Suzhou 215123 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    lead halide perovskites; CsPbBr3; amplification spontaneous emission; crystallization; luminescence; polyethylene glycol;

    机译：铅卤化卤化物;CSPBBR3;扩增自发发射;结晶;发光;聚乙二醇;

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