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Silicon doping system at the research reactor FRM II.

机译:硅掺杂系统在研究反应器FRM II。

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摘要

Silicon doping has being carried out at FRM II since 2 years. During the commissioning of our new reactor, a simple test rig was used to determine the neutron flux profile at the irradiation position and optimise a nickel absorber liner, which is equipped at the irradiation position for vertical smoothing of the neutron flux profile. MCNP-code was used during the design of the liner. The final automatic doping system is designed to allow the irradiation of cylindrical silicon single crystals 500mm high and up to 200mm in diameter. Silicon ingots are additionally rotated continuously about their own cylinder axis during irradiation. The neutron flux density is measured online by using self-powered-neutron (SPN) detectors. The necessary doping homogeneity of +/-5% is achieved. The doping procedure and doping quality of ingots with high target resistivity are also discussed.
机译:自2年以来,硅掺杂已经在FRM II下进行。 在我们的新反应器的调试过程中,使用简单的试验台来确定照射位置处的中子磁通曲线,并优化镍吸收衬里,其配备在节能磁通曲线的垂直平滑的照射位置。 MCNP码在衬里设计期间使用。 最终的自动掺杂系统设计用于允许圆柱形硅单晶的照射为500mm,直径高达200毫米。 在照射期间,硅锭还连续地旋转它们自己的圆柱轴线。 通过使用自动中子(SPN)探测器在线在线测量中子磁通密度。 实现了+/- 5%的必要掺杂均匀性。 还讨论了具有高目标电阻率的掺杂程序和掺杂质量。

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