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首页> 外文期刊>Applied radiation and isotopes: including data, instrumentation and methods for use in agriculture, industry and medicine >Skin dose measurements using MOSFET and TLD for head and neck patients treated with tomotherapy.
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Skin dose measurements using MOSFET and TLD for head and neck patients treated with tomotherapy.

机译：皮肤剂量测量使用MOSFET和TLD用于治疗Tomotherapy治疗的头部和颈部患者。

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摘要

The purpose of this work was to estimate skin dose for the patients treated with tomotherapy using metal oxide semiconductor field-effect transistors (MOSFETs) and thermoluminescent dosimeters (TLDs). In vivo measurements were performed for two head and neck patients treated with tomotherapy and compared to TLD measurements. The measurements were subsequently carried out for five days to estimate the inter-fraction deviations in MOSFET measurements. The variation between skin dose measured with MOSFET and TLD for first patient was 2.2%. Similarly, the variation of 2.3% was observed between skin dose measured with MOSFET and TLD for second patient. The tomotherapy treatment planning system overestimated the skin dose as much as by 10-12% when compared to both MOSFET and TLD. However, the MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1% to 1.4%. MOSFETs may be used as a viable dosimeter for measuring skin dose in areas where the treatment planning system may not be accurate.
机译：这项工作的目的是使用金属氧化物半导体场效应晶体管（MOSFET）和热敏发光剂量计（TLD）来估计皮肤治疗的患者的皮肤剂量。在治疗过度治疗的两个头颈患者和与TLD测量相比，进行体内测量。随后进行测量5天以估计MOSFET测量中的分数间偏差。用MOSFET测量的皮肤剂量和第一个患者的TLD之间的变化为2.2％。类似地，在用MOSFET和TLD测量的皮肤剂量之间观察到2.3％的变异，用于第二患者。与MOSFET和TLD相比，TOMOTERAPY治疗计划系统高估如10-12％的皮肤剂量。然而，MOSFET测量的患者皮肤剂量也具有良好的再现性，并且帧间偏差范围为1％至1.4％。 MOSFET可以用作可行的剂量表，用于测量治疗计划系统可能不准确的区域中的皮肤剂量。

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