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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Modeling a Ni/beta-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering
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Modeling a Ni/beta-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering

机译：建模NI / BETA-GA2O3肖特基势垒二极管沉积围网磁场溅射

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摘要

In this work, a detailed numerical simulation is carried out to model the current-voltage characteristics of a nickel/beta-Ga2O3 Schottky barrier diode at different temperatures. These SBDs are produced using confined magnetic-field-based sputtering to deposit the nickel (Ni) Schottky contact of the diode. This method reduces the thickness of the defect area created by plasma and argon bombardment, and consequently, the electrical characteristics are less affected by temperature changes or annealing (i.e. the device is more stable). During annealing, Ni diffuses into beta-Ga2O3. A model for this diffusion is proposed in this work, in which Ni diffusion reduces the defects produced by plasma and argon bombardment by filling the Ga vacancy. Furthermore, Ni diffusion produces a new interfacial compound, namely (NixGa(1-x))(2)O-3 beta-Ga2O3. This new compound layer has different properties than those of beta-Ga2O3, in particular, those of the bandgap and the affinity. Finally, the temperature-dependent current-density-voltage (J-V) characteristics are simulated, taking the proposed model into account. A good agreement with measured values is achieved, especially at low forward voltages, which demonstrates the soundness of the proposed model.
机译：本文对镍/β-Ga2O3肖特基势垒二极管在不同温度下的电流-电压特性进行了详细的数值模拟。这些SBD是使用基于受限磁场的溅射来沉积二极管的镍（Ni）肖特基触点来制造的。这种方法减少了等离子体和氩轰击产生的缺陷区域的厚度，因此，电气特性受温度变化或退火的影响较小（即，设备更稳定）。在退火过程中，镍扩散到β-Ga2O3中。本文提出了一种扩散模型，其中Ni扩散通过填充Ga空位来减少等离子体和氩轰击产生的缺陷。此外，镍扩散产生一种新的界面化合物，即（NixGa（1-x））（2）O-3β-Ga2O3。这种新化合物层具有与β-Ga2O3不同的性质，尤其是带隙和亲和性。最后，考虑所提出的模型，对温度相关的电流密度-电压（J-V）特性进行了仿真。与实测值吻合良好，尤其是在低正向电压下，这证明了所提出模型的合理性。

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