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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Nonlinear electrical transport in Fe3O4-decorated graphene nanoplatelets
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Nonlinear electrical transport in Fe3O4-decorated graphene nanoplatelets

机译：Fe3O4装饰石墨烯纳米片上的非线性电气输送

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This paper investigates the nonlinear properties of graphene nanoplatelets (GNPs), decorated with Fe3O4 magnetic nanoparticles (MaNPs). Nanocomposite MaNP/GNP samples were prepared by a solvothermal method with three different MaNP loading concentrations of 17 wt%, 28 wt% and 40 wt%, and deposited on a metallic interdigitated electrode (IDE). Three different models are proposed to assess measurements, with the objective to explain the electronic transport in the nanocomposites. At first, a thermionic transport model is proposed to fit the DC nonlinear current-voltage characteristics for the three concentrations. It is observed that the barrier height decreases to 0.312, 0.310 and 0.281 eV, following a decrease in the MaNP loading. A second model, dynamic random resistor network (DRRN) further shows that the impedance of IDE increases following the decreasing MaNP loading rate, 40 wt% > 28 wt% > 17 wt%, and that charge transport takes place through a resistor-capacitor (RC) rectifying percolating network. Finally, impedance spectroscopy performed at different applied DC biases shows that a constant phase element (CPE) is necessary in the equivalent circuit in order to fit the Cole-Cole plot AC response of the IDE, instead of the classical parallel RC circuit. The presence of the CPE confirms the hypothesis of random phenomena occurring in the transport according to the DRRN model. CPE is associated with a spatial distribution of different RC circuits, due to disorderness that arises from inhomogeneities in the Fe3O4-GNP samples.
机译：本文研究了用Fe3O4磁性纳米颗粒（MANP）修饰的石墨烯纳米片（GNP）的非线性特性。采用溶剂热法制备了三种不同MaNP负载浓度（17%、28%和40%）的纳米复合MaNP/GNP样品，并将其沉积在金属叉指电极（IDE）上。提出了三种不同的模型来评估测量结果，目的是解释纳米复合材料中的电子输运。首先，提出了一个热离子输运模型来拟合三种浓度下的直流非线性电流-电压特性。观察到，随着MaNP负载的降低，势垒高度降低至0.312、0.310和0.281 eV。第二个模型，动态随机电阻网络（DRRN）进一步表明，IDE的阻抗随着MaNP加载速率的降低而增加，40 wt%>28 wt%>17 wt%，电荷传输通过电阻-电容（RC）整流渗滤网络发生。最后，在不同直流偏置下进行的阻抗谱表明，为了拟合IDE的Cole-Cole图交流响应，等效电路中需要一个恒定相位元件（CPE），而不是经典的并联RC电路。根据DRRN模型，CPE的存在证实了在传输中发生随机现象的假设。CPE与不同RC电路的空间分布有关，这是由于Fe3O4 GNP样品中的不均匀性导致的无序。

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