Influence of Low Axial Temperature Gradient on Ga-Doped Germanium Crystal Growth by the Vertical Bridgman Method

Kozhemyakin G. N.; Strelov V. I.; Sidorov V. S.; Korobeynikova E. N.

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Influence of Low Axial Temperature Gradient on Ga-Doped Germanium Crystal Growth by the Vertical Bridgman Method

机译：低轴向温度梯度对垂直Bridgman方法的Ga-掺杂锗晶体生长的影响

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The influence of a low axial temperature gradient on the growth of the Ge:Ga crystal by the vertical Bridgman technique was investigated. The axial temperature gradient of 3.3 K/cm is shown to provide conditions for polycrystalline growth of Ge:Ga crystals. The layers with the distances from 14 to 277 mu m are found in the grown crystals with a concave of the solid-liquid interface. The motion of textolite particles in distilled water is visualized by the light cut method at different values of axial and radial temperature gradients. In the absence of the radial temperature gradient, no convection is observed when the axial temperature gradient increases from 0.1 to 6.5 K/cm. In this case, the particle motion velocity increases proportionally to the axial temperature gradient due to the occurrence of thermal diffusion. The convective flow appear in the liquid at the radial temperature gradient of 0.6 K/cm and an axial gradient above 0.1 K/cm.

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《Crystallography reports》 |2020年第5期|共7页
作者
Kozhemyakin G. N.; Strelov V. I.; Sidorov V. S.; Korobeynikova E. N.;
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Russian Acad Sci Shubnikov Inst Crystallog Fed Sci Res Ctr Crystallog &

Photon Moscow 119333 Russia;

Russian Acad Sci Shubnikov Inst Crystallog Fed Sci Res Ctr Crystallog &

Photon Moscow 119333 Russia;

Russian Acad Sci Shubnikov Inst Crystallog Fed Sci Res Ctr Crystallog &

Photon Moscow 119333 Russia;

Russian Acad Sci Shubnikov Inst Crystallog Fed Sci Res Ctr Crystallog &

Photon Moscow 119333 Russia;

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正文语种 eng
中图分类晶体学;
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Influence of Low Axial Temperature Gradient on Ga-Doped Germanium Crystal Growth by the Vertical Bridgman Method

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