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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Opto-electronic characterization of starch capped zinc chalcogenides (core-shell) nanocomposites and their application as Schottky device
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Opto-electronic characterization of starch capped zinc chalcogenides (core-shell) nanocomposites and their application as Schottky device

机译：淀粉封端锌硫胺化物（核 - 壳）纳米复合材料的光电特征及其作为肖特基装置的应用

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摘要

Optoelectronic properties of starch capped zinc chalcogenides (ZnO-ZnS and ZnS-ZnO) core-shell nanocomposites are found to be suitable for use in photoconductive devices. An increase in shell thickness can enhance the charge separation that thereby the efficiency. Schottky diodes based on ZnO-ZnS and ZnS-ZnO core-shells nanocomposites exhibit suitable rectifying behaviour in dark. The fundamental device parameters such as barrier height (phi(b)), saturation current (I-s) and ideality factor (beta) are calculated at 300 K (room temperature) from the I-V curve and the effects of the shell thickness on the device performance has thus been investigated. Variation of ideality factor may be attributed to increasing inhomogeneity and interfacial surface defects across the junction. Schottky diodes are also observed as photodetector in response to blue and green LED lights. Responsivity and quantum efficiency of core/shell based Schottky photodiodes are found to be higher than that of core-based Schottky photodiodes.
机译：淀粉包覆的硫化锌（ZnO-ZnS和ZnS-ZnO）核壳纳米复合材料的光电性能适合用于光电导器件。壳体厚度的增加可以增强电荷分离，从而提高效率。基于ZnO-ZnS和ZnS-ZnO核壳纳米复合材料的肖特基二极管在黑暗中表现出合适的整流行为。从I-V曲线计算了300 K（室温）下的基本器件参数，如势垒高度（φ（b））、饱和电流（I-s）和理想因子（β），并由此研究了壳厚度对器件性能的影响。理想因子的变化可能归因于连接处的不均匀性和界面表面缺陷的增加。肖特基二极管也被视为响应蓝色和绿色LED灯的光电探测器。核/壳肖特基光电二极管的响应度和量子效率高于核肖特基光电二极管。

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