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首页> 外文期刊>RSC Advances >One step hydrothermal synthesis of a rGO-TiO2 nanocomposite and its application on a Schottky diode: improvement in device performance and transport properties
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One step hydrothermal synthesis of a rGO-TiO2 nanocomposite and its application on a Schottky diode: improvement in device performance and transport properties

机译：rgo-TiO2纳米复合材料的一步水热合成及其在肖特基二极管的应用：装置性能和运输性能的提高

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摘要

The presence of a Schottky barrier (SB) at a metal-semiconductor (MS) interface is of paramount importance to numerous application fields. In this report, we demonstrate the performance comparison of Schottky diodes fabricated with TiO2 and rGO-TiO2 nanocomposites, in contact with aluminium. From forward I-V characteristics, important diode parameters i.e. rectification ratio, ideality factor, series resistance and barrier height were obtained. A photoresponse comparison of the diodes has also been performed. It was found that the rGO-TiO2 based junction showed improved performance. The rectification ratio increased by similar to 94% and the barrier height was lowered by similar to 10%, under dark conditions. For better realization of the junction, here we provide insight into the carrier transport properties with the help of space charge limited current (SCLC) theory. After introducing graphene, the carrier mobility and carrier concentration increased by 64% and 21% respectively, while the diffusion length is found to be improved by 13.4%. These results illustrate that rGO incorporation has led to a much improved carrier transport and electron hole separation. Due to greater light absorption, the improvement in diode parameters and transport properties were even better when the device was subjected to irradiation.
机译：在金属半导体（MS）接口处的肖特基屏障（SB）的存在对于许多应用领域至关重要。在本报告中，我们展示了用TiO2和Rgo-TiO2纳米复合材料制造的肖特基二极管的性能比较，与铝接触。从前行I-V特性，重要的二极管参数即获得整流率，理想因子，串联电阻和屏障高度。也已经执行了二极管的光响应比较。发现Rgo-TiO2的结显示出改善的性能。整流率与94％相似，屏障高度降低至暗条件下的10％。为了更好地实现交界处，在这里，我们在空间充电有限公司（SCLC）理论的帮助下，我们提供了进入载波运输特性的洞察力。在引入石墨烯后，载流子迁移率和载体浓度分别增加了64％和21％，而扩散长度被发现提高13.4％。这些结果说明RGO Indoration已经导致了大大改进的载波运输和电子孔分离。由于更大的光吸收，当将器件进行照射时，二极管参数和传输性能的改善甚至更好。

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