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首页> 外文期刊>Journal of Micromechanics and Microengineering >Sacrificial grid release technology: a versatile release concept for MEMS structures
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Sacrificial grid release technology: a versatile release concept for MEMS structures

机译:牺牲网格释放技术:MEMS结构的多功能释放概念

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摘要

Micro-electro-mechanical-systems (MEMS) structures with different in-plane dimensions often need to be released simultaneously from the bulk of the wafer and a single dry etching or wet etching technique cannot fulfill all release requirements. In this paper we present a universally applicable solution to release MEMS structures with different surface areas in a controlled and uniform way, which combines isotropic etching of a sacrificial silicon support structure by xenon difluoride with a predefined etch surface made by deep reactive ion etching. Two applications of this Sacrificial Grid Release Technology are presented, in which MEMS devices are released in silicon-on-insulator wafers. The demonstrated applications involve the release of microstructures with in-plane dimensions ranging from tens of micrometers to a few millimeters. The sacrificial silicon structure provides mechanical support which allows freedom in process flow design for fragile MEMS structures. The release technique can also be used to separate the chips from the wafer.
机译:具有不同面内尺寸的微电子机械系统(MEMS)结构通常需要同时从晶圆的主体上释放,单一的干法或湿法蚀刻技术无法满足所有释放要求。在本文中,我们提出了一种普遍适用的解决方案,以受控和均匀的方式释放具有不同表面积的MEMS结构,该方案将二氟化氙对牺牲硅支撑结构的各向同性蚀刻与深度反应离子蚀刻形成的预定义蚀刻表面相结合。本文介绍了这种牺牲栅释放技术的两个应用,其中MEMS器件在绝缘体硅片中释放。演示的应用包括释放平面尺寸从几十微米到几毫米的微结构。牺牲硅结构提供了机械支撑,允许在脆弱的MEMS结构的工艺流程设计中自由发挥作用。释放技术也可用于将芯片与晶圆分离。

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