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首页> 外文期刊>Journal of Micromechanics and Microengineering >Limitations on MEMS design resulting from random stress gradient variations in sputtered thin films
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Limitations on MEMS design resulting from random stress gradient variations in sputtered thin films

机译：溅射薄膜随机应力梯度变化产生的MEMS设计的限制

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Residual stress gradients often negatively affect the performance of MEMS devices, causing film curvature and changing the designed gaps of released structures. In this work, we built folded beams designed to compensate for the film curvature and keep the actuator gaps of sensitive resonant switches constant. While the average stress gradient is cancelled by our designs, we find that random variations in the stress gradient (rather than random variations in device dimensions) cause the majority of the observed variation in actuator gap. To our knowledge, this has not previously been reported, and represents an important limitation on MEMS designs using sputtered films. The standard deviation of the 400 nm contact gap for a folded beam of total length 152 mu m and width 108 mu m was measured to be about 134 nm. Using parameters measured from test cantilevers, our simulations predict that about 98% of the variation in contact gap is due to stress gradient variation, rather than variations in device geometry.
机译：残余应力梯度通常会对MEMS器件的性能产生负面影响，导致薄膜弯曲，并改变释放结构的设计间隙。在这项工作中，我们构建了折叠梁，用于补偿薄膜曲率，并保持敏感谐振开关的执行器间隙恒定。虽然我们的设计消除了平均应力梯度，但我们发现应力梯度的随机变化（而不是器件尺寸的随机变化）导致了致动器间隙的大部分观察变化。据我们所知，这之前没有报道过，这代表了使用溅射薄膜的MEMS设计的一个重要限制。对于总长152μm、宽度108μm的折叠梁，400 nm接触间隙的标准偏差约为134 nm。使用从测试悬臂测量的参数，我们的模拟预测，接触间隙中约98%的变化是由于应力梯度变化，而不是器件几何结构的变化。

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