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Towards field-effect controlled graphene-enhanced Raman spectroscopy of cobalt octaethylporphyrin molecules

机译:朝向场效应控制石墨烯增强拉曼光谱钴八丁基卟啉分子

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During the last decade graphene-enhanced Raman spectroscopy has proven to be a powerful tool to detect and analyze minute amounts of molecules adsorbed on graphene. By using a graphene-based field-effect device the unique opportunity arises to gain a deeper insight into the coupling of molecules and graphene as graphene's Fermi level can be controlled by the transistors gate voltage. However, the fabrication of such a device comes with great challenges because of contaminations stemming from processing the device inevitably prevent direct adsorption of the molecules onto graphene rendering it unsuitable for field-effect controlled graphene-enhanced Raman spectroscopy measurements/experiments. In this work, we solve this problem by establishing two different fabrication procedures for such devices, both of which are in addition compatible with large area and scalable production requirements. As a first solution, selective argon cluster irradiation is shown to be an efficient way to remove resist residues after processing. We provide evidence that after the irradiation the enhancement of the molecular Raman signal can indeed be measured, demonstrating that this procedure cleans graphene's surface sufficiently enough for direct molecular adsorption. As a second solution, we have developed a novel stacking method to encapsulate the molecules in between two graphene layers to protect the underlying graphene and molecular layer from the harsh conditions during the photolithography process. This method combines the advantages of dry stacking, which leads to a perfectly clean interface, and wet stacking processes, which can easily be scaled up for large area processing. Both approaches yield working graphene transistors with strong molecular Raman signals stemming from cobalt octaehtylporphyrin, a promising and prototypical candidate for spintronic applications, and are therefore suitable for graphene based molecular sensing applications.
机译:在过去十年中,石墨烯增强拉曼光谱已被证明是检测和分析吸附在石墨烯上的微量分子的有力工具。由于石墨烯的费米能级可以由晶体管的栅极电压控制,通过使用基于石墨烯的场效应器件,就有了一个独特的机会,可以更深入地了解分子与石墨烯的耦合。然而,这种器件的制造带来了巨大的挑战,因为加工过程中产生的污染不可避免地阻止了分子在石墨烯上的直接吸附,使得其不适用于场效应控制的石墨烯增强拉曼光谱测量/实验。在这项工作中,我们通过为这类器件建立两种不同的制造程序来解决这个问题,这两种程序都与大面积和可扩展的生产要求相兼容。作为第一种解决方案,选择性氩团簇辐照被证明是去除加工后抗蚀剂残留物的有效方法。我们提供的证据表明,在辐照后,确实可以测量到分子拉曼信号的增强,这表明该过程充分清洁了石墨烯的表面,足以直接进行分子吸附。作为第二种解决方案,我们开发了一种新的堆叠方法,将分子封装在两个石墨烯层之间,以保护底层石墨烯和分子层免受光刻过程中恶劣条件的影响。这种方法结合了干法堆垛和湿法堆垛的优点,干法堆垛可以产生非常干净的界面,湿法堆垛可以很容易地扩大到大面积加工。这两种方法都能产生工作石墨烯晶体管,其强分子拉曼信号源于八烷基卟啉钴,这是一种很有前途的典型自旋电子学应用候选者,因此适用于基于石墨烯的分子传感应用。

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